Справочник MOSFET. GSM4172S

 

GSM4172S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: GSM4172S

Маркировка: 4172S

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 2.8 W

Предельно допустимое напряжение сток-исток (Uds): 30 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Пороговое напряжение включения Ugs(th): 2 V

Максимально допустимый постоянный ток стока (Id): 15 A

Максимальная температура канала (Tj): 150 °C

Общий заряд затвора (Qg): 10 nC

Время нарастания (tr): 10 ns

Выходная емкость (Cd): 200 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.012 Ohm

Тип корпуса: SOP-8P

Аналог (замена) для GSM4172S

 

 

GSM4172S Datasheet (PDF)

1.1. gsm4172s.pdf Size:888K _update-mosfet

GSM4172S
GSM4172S

GSM4172S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4172S, N-Channel enhancement mode  30V/15A,RDS(ON)=12mΩ@VGS=10V MOSFET, uses Advanced Trench Technology to  30V/13A,RDS(ON)=15mΩ@VGS=4.5V provide excellent RDS(ON), low gate charge.  Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low 

3.1. gsm4172ws.pdf Size:865K _update-mosfet

GSM4172S
GSM4172S

GSM4172WS 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4172WS, N-Channel enhancement mode  30V/15A,RDS(ON)=12mΩ@VGS=10V MOSFET, uses Advanced Trench Technology to  30V/13A,RDS(ON)=15mΩ@VGS=4.5V provide excellent RDS(ON), low gate charge.  Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 5.1. gsm4124ws.pdf Size:1293K _update-mosfet

GSM4172S
GSM4172S

GSM4124WS 40V N-Channel Enhancement Mode MOSFET Product Description Features 40V/14A,RDS(ON)=8mΩ@VGS=10V GSM4124WS, N-Channel enhancement mode 40V/12A,RDS(ON)=9mΩ@VGS=4.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) SOP-8P package design These devices are particul

5.2. gsm4102w.pdf Size:748K _update-mosfet

GSM4172S
GSM4172S

GSM4102W 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM4102W, N-Channel enhancement mode  100V/3.8A,RDS(ON)=158mΩ@VGS=10V MOSFET, uses Advanced Trench Technology to  100V/3.0A,RDS(ON)=175mΩ@VGS=4.5V provide excellent RDS(ON), low gate charge.  Super high density cell design for extremely low RDS (ON) These devices are particularly suited for

 5.3. gsm4134.pdf Size:843K _update-mosfet

GSM4172S
GSM4172S

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4134, N-Channel enhancement mode 30V/12A,RDS(ON)=15mΩ@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/10A,RDS(ON)=20mΩ@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for low SOP-8P package design

5.4. gsm4134w.pdf Size:845K _update-mosfet

GSM4172S
GSM4172S

GSM4134W 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4134W, N-Channel enhancement mode 30V/12A,RDS(ON)=16mΩ@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/10A,RDS(ON)=18mΩ@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for low SOP-8P pac

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