GSM4172S Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: GSM4172S
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 2.8 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 15 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 10 ns
Cossⓘ - Выходная емкость: 200 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.012 Ohm
Тип корпуса: SOP-8P
Аналог (замена) для GSM4172S
GSM4172S Datasheet (PDF)
gsm4172s.pdf

GSM4172S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4172S, N-Channel enhancement mode 30V/15A,RDS(ON)=12m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/13A,RDS(ON)=15m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low
gsm4172ws.pdf

GSM4172WS 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4172WS, N-Channel enhancement mode 30V/15A,RDS(ON)=12m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/13A,RDS(ON)=15m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low
gsm4124ws.pdf

GSM4124WS 40V N-Channel Enhancement Mode MOSFET Product Description Features 40V/14A,RDS(ON)=8m@VGS=10V GSM4124WS, N-Channel enhancement mode 40V/12A,RDS(ON)=9m@VGS=4.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) SOP-8P package design These devices are particul
gsm4102w.pdf

GSM4102W 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM4102W, N-Channel enhancement mode 100V/3.8A,RDS(ON)=158m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/3.0A,RDS(ON)=175m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for
Другие MOSFET... GSM3911W , GSM3981 , GSM3993 , GSM4048WS , GSM4102W , GSM4124WS , GSM4134 , GSM4134W , IRFP260N , GSM4172WS , GSM4210 , GSM4210W , GSM4214 , GSM4214W , GSM4228 , GSM4248W , GSM4401S .
History: FDMS0312AS | 13N60AF | NTP30N06L | WSP4016 | IRFB3207ZPBF | SFB1800N650C2 | TK12J60W
History: FDMS0312AS | 13N60AF | NTP30N06L | WSP4016 | IRFB3207ZPBF | SFB1800N650C2 | TK12J60W



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