All MOSFET. GSM4172S Datasheet

 

GSM4172S MOSFET. Datasheet pdf. Equivalent

Type Designator: GSM4172S

Marking Code: 4172S

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2.8 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V

Maximum Drain Current |Id|: 15 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 10 nC

Rise Time (tr): 10 nS

Drain-Source Capacitance (Cd): 200 pF

Maximum Drain-Source On-State Resistance (Rds): 0.012 Ohm

Package: SOP-8P

GSM4172S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

GSM4172S Datasheet (PDF)

1.1. gsm4172s.pdf Size:888K _update-mosfet

GSM4172S
GSM4172S

GSM4172S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4172S, N-Channel enhancement mode  30V/15A,RDS(ON)=12mΩ@VGS=10V MOSFET, uses Advanced Trench Technology to  30V/13A,RDS(ON)=15mΩ@VGS=4.5V provide excellent RDS(ON), low gate charge.  Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low 

3.1. gsm4172ws.pdf Size:865K _update-mosfet

GSM4172S
GSM4172S

GSM4172WS 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4172WS, N-Channel enhancement mode  30V/15A,RDS(ON)=12mΩ@VGS=10V MOSFET, uses Advanced Trench Technology to  30V/13A,RDS(ON)=15mΩ@VGS=4.5V provide excellent RDS(ON), low gate charge.  Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 5.1. gsm4124ws.pdf Size:1293K _update-mosfet

GSM4172S
GSM4172S

GSM4124WS 40V N-Channel Enhancement Mode MOSFET Product Description Features 40V/14A,RDS(ON)=8mΩ@VGS=10V GSM4124WS, N-Channel enhancement mode 40V/12A,RDS(ON)=9mΩ@VGS=4.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) SOP-8P package design These devices are particul

5.2. gsm4102w.pdf Size:748K _update-mosfet

GSM4172S
GSM4172S

GSM4102W 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM4102W, N-Channel enhancement mode  100V/3.8A,RDS(ON)=158mΩ@VGS=10V MOSFET, uses Advanced Trench Technology to  100V/3.0A,RDS(ON)=175mΩ@VGS=4.5V provide excellent RDS(ON), low gate charge.  Super high density cell design for extremely low RDS (ON) These devices are particularly suited for

 5.3. gsm4134.pdf Size:843K _update-mosfet

GSM4172S
GSM4172S

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4134, N-Channel enhancement mode 30V/12A,RDS(ON)=15mΩ@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/10A,RDS(ON)=20mΩ@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for low SOP-8P package design

5.4. gsm4134w.pdf Size:845K _update-mosfet

GSM4172S
GSM4172S

GSM4134W 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4134W, N-Channel enhancement mode 30V/12A,RDS(ON)=16mΩ@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/10A,RDS(ON)=18mΩ@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for low SOP-8P pac

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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