GSM4172WS Todos los transistores

 ..1. Size:865K  globaltech semi
 gsm4172ws.pdf

 7.1. Size:888K  globaltech semi
 gsm4172s.pdf

GSM4172S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4172S, N-Channel enhancement mode 30V/15A,RDS(ON)=12m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/13A,RDS(ON)=15m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 9.1. Size:1293K  globaltech semi
 gsm4124ws.pdf

GSM4124WS 40V N-Channel Enhancement Mode MOSFET Product Description Features 40V/14A,RDS(ON)=8m @VGS=10V GSM4124WS, N-Channel enhancement mode 40V/12A,RDS(ON)=9m @VGS=4.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) SOP-8P package design These devices are particul

 9.2. Size:748K  globaltech semi
 gsm4102w.pdf

GSM4102W 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM4102W, N-Channel enhancement mode 100V/3.8A,RDS(ON)=158m @VGS=10V MOSFET, uses Advanced Trench Technology to 100V/3.0A,RDS(ON)=175m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for

 9.3. Size:845K  globaltech semi
 gsm4134w.pdf

GSM4134W 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4134W, N-Channel enhancement mode 30V/12A,RDS(ON)=16m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/10A,RDS(ON)=18m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for low SOP-8P pac

 9.4. Size:843K  globaltech semi
 gsm4134.pdf

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4134, N-Channel enhancement mode 30V/12A,RDS(ON)=15m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/10A,RDS(ON)=20m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for low SOP-8P package design