GSM4172WS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: GSM4172WS
Маркировка: 4172WS
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 2.8 W
Предельно допустимое напряжение сток-исток (Uds): 30 V
Предельно допустимое напряжение затвор-исток (Ugs): 20 V
Пороговое напряжение включения Ugs(th): 2 V
Максимально допустимый постоянный ток стока (Id): 15 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 10 nC
Время нарастания (tr): 10 ns
Выходная емкость (Cd): 200 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.012 Ohm
Тип корпуса: SOP-8P
GSM4172WS Datasheet (PDF)
1.1. gsm4172ws.pdf 
Size:865K _update-mosfet
GSM4172WS 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4172WS, N-Channel enhancement mode 30V/15A,RDS(ON)=12mΩ@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/13A,RDS(ON)=15mΩ@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low
3.1. gsm4172s.pdf Size:888K _update-mosfet
GSM4172S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4172S, N-Channel enhancement mode 30V/15A,RDS(ON)=12mΩ@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/13A,RDS(ON)=15mΩ@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low
5.1. gsm4124ws.pdf Size:1293K _update-mosfet
GSM4124WS 40V N-Channel Enhancement Mode MOSFET Product Description Features 40V/14A,RDS(ON)=8mΩ@VGS=10V GSM4124WS, N-Channel enhancement mode 40V/12A,RDS(ON)=9mΩ@VGS=4.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) SOP-8P package design These devices are particul
5.2. gsm4102w.pdf Size:748K _update-mosfet
GSM4102W 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM4102W, N-Channel enhancement mode 100V/3.8A,RDS(ON)=158mΩ@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/3.0A,RDS(ON)=175mΩ@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for
5.3. gsm4134.pdf Size:843K _update-mosfet
30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4134, N-Channel enhancement mode 30V/12A,RDS(ON)=15mΩ@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/10A,RDS(ON)=20mΩ@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for low SOP-8P package design
5.4. gsm4134w.pdf Size:845K _update-mosfet
GSM4134W 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4134W, N-Channel enhancement mode 30V/12A,RDS(ON)=16mΩ@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/10A,RDS(ON)=18mΩ@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for low SOP-8P pac
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Список транзисторов
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