Справочник MOSFET. GSM4172WS

 

GSM4172WS Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: GSM4172WS
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2.8 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 15 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 10 ns
   Cossⓘ - Выходная емкость: 200 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.012 Ohm
   Тип корпуса: SOP-8P
     - подбор MOSFET транзистора по параметрам

 

GSM4172WS Datasheet (PDF)

 ..1. Size:865K  globaltech semi
 gsm4172ws.pdf pdf_icon

GSM4172WS

GSM4172WS 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4172WS, N-Channel enhancement mode 30V/15A,RDS(ON)=12m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/13A,RDS(ON)=15m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 7.1. Size:888K  globaltech semi
 gsm4172s.pdf pdf_icon

GSM4172WS

GSM4172S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4172S, N-Channel enhancement mode 30V/15A,RDS(ON)=12m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/13A,RDS(ON)=15m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 9.1. Size:1293K  globaltech semi
 gsm4124ws.pdf pdf_icon

GSM4172WS

GSM4124WS 40V N-Channel Enhancement Mode MOSFET Product Description Features 40V/14A,RDS(ON)=8m@VGS=10V GSM4124WS, N-Channel enhancement mode 40V/12A,RDS(ON)=9m@VGS=4.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) SOP-8P package design These devices are particul

 9.2. Size:748K  globaltech semi
 gsm4102w.pdf pdf_icon

GSM4172WS

GSM4102W 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM4102W, N-Channel enhancement mode 100V/3.8A,RDS(ON)=158m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/3.0A,RDS(ON)=175m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for

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History: WMB060N10LGS | PMN30UN | 2SK3572-Z | SSM95T06GS | SI2312 | IPD14N06S2-80 | FDMC7208S

 

 
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