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GSM4210W MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: GSM4210W

Código: 4210W

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 2.8 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 6.8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2 V

Carga de compuerta (Qg): 4 nC

Tiempo de elevación (tr): 10 nS

Conductancia de drenaje-sustrato (Cd): 80 pF

Resistencia drenaje-fuente RDS(on): 0.032 Ohm

Empaquetado / Estuche: SOP-8

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GSM4210W Datasheet (PDF)

1.1. gsm4210w.pdf Size:937K _update-mosfet

GSM4210W
GSM4210W

GSM4210W 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4210W, N-Channel enhancement mode  30V/6.8A,RDS(ON)=32mΩ@VGS=10V MOSFET, uses Advanced Trench Technology to  30V/5.6A,RDS(ON)=40mΩ@VGS=4.5V provide excellent RDS(ON), low gate charge.  Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

3.1. gsm4210.pdf Size:966K _update-mosfet

GSM4210W
GSM4210W

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4210, N-Channel enhancement mode  30V/6.8A,RDS(ON)=35mΩ@VGS=10V MOSFET, uses Advanced Trench Technology to  30V/5.6A,RDS(ON)=42mΩ@VGS=4.5V provide excellent RDS(ON), low gate charge.  Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

 4.1. gsm4214.pdf Size:824K _update-mosfet

GSM4210W
GSM4210W

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4214, N-Channel enhancement mode  30V/9A,RDS(ON)=16mΩ@VGS=10V MOSFET, uses Advanced Trench Technology to  30V/8A,RDS(ON)=20mΩ@VGS=4.5V provide excellent RDS(ON), low gate charge. These  Super high density cell design for extremely devices are particularly suited for low voltage low RDS (ON) power mana

4.2. gsm4214w.pdf Size:794K _update-mosfet

GSM4210W
GSM4210W

GSM4214W 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4214W, N-Channel enhancement mode  30V/9A,RDS(ON)=16mΩ@VGS=10V MOSFET, uses Advanced Trench Technology to  30V/8A,RDS(ON)=18mΩ@VGS=4.5V provide excellent RDS(ON), low gate charge.  Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low  S

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