GSM4210W MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: GSM4210W
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.8 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 6.8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 80 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.032 Ohm
Paquete / Cubierta: SOP-8
Búsqueda de reemplazo de MOSFET GSM4210W
Principales características: GSM4210W
gsm4210.pdf
30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4210, N-Channel enhancement mode 30V/6.8A,RDS(ON)=35m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/5.6A,RDS(ON)=42m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power
gsm4214.pdf
30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4214, N-Channel enhancement mode 30V/9A,RDS(ON)=16m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/8A,RDS(ON)=20m @VGS=4.5V provide excellent RDS(ON), low gate charge. These Super high density cell design for extremely devices are particularly suited for low voltage low RDS (ON) power mana
gsm4214w.pdf
GSM4214W 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4214W, N-Channel enhancement mode 30V/9A,RDS(ON)=16m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/8A,RDS(ON)=18m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low S
Otros transistores... GSM4048WS , GSM4102W , GSM4124WS , GSM4134 , GSM4134W , GSM4172S , GSM4172WS , GSM4210 , IRFP260N , GSM4214 , GSM4214W , GSM4228 , GSM4248W , GSM4401S , GSM4403 , GSM4412 , GSM4412W .
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