All MOSFET. GSM4210W Datasheet

 

GSM4210W Datasheet and Replacement


   Type Designator: GSM4210W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: SOP-8
 

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GSM4210W Datasheet (PDF)

 ..1. Size:937K  globaltech semi
 gsm4210w.pdf pdf_icon

GSM4210W

GSM4210W 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4210W, N-Channel enhancement mode 30V/6.8A,RDS(ON)=32m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/5.6A,RDS(ON)=40m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 7.1. Size:966K  globaltech semi
 gsm4210.pdf pdf_icon

GSM4210W

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4210, N-Channel enhancement mode 30V/6.8A,RDS(ON)=35m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/5.6A,RDS(ON)=42m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

 8.1. Size:824K  globaltech semi
 gsm4214.pdf pdf_icon

GSM4210W

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4214, N-Channel enhancement mode 30V/9A,RDS(ON)=16m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/8A,RDS(ON)=20m@VGS=4.5V provide excellent RDS(ON), low gate charge. These Super high density cell design for extremely devices are particularly suited for low voltage low RDS (ON) power mana

 8.2. Size:794K  globaltech semi
 gsm4214w.pdf pdf_icon

GSM4210W

GSM4214W 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4214W, N-Channel enhancement mode 30V/9A,RDS(ON)=16m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/8A,RDS(ON)=18m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low S

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Datasheet: GSM4048WS , GSM4102W , GSM4124WS , GSM4134 , GSM4134W , GSM4172S , GSM4172WS , GSM4210 , 10N60 , GSM4214 , GSM4214W , GSM4228 , GSM4248W , GSM4401S , GSM4403 , GSM4412 , GSM4412W .

Keywords - GSM4210W MOSFET datasheet

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