GSM4248W Todos los transistores

 

GSM4248W MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: GSM4248W

Código: 4248W

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 2.8 W

Tensión drenaje-fuente (Vds): 20 V

Tensión compuerta-fuente (Vgs): 12 V

Corriente continua de drenaje (Id): 6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 1 V

Carga de compuerta (Qg): 0.65 nC

Tiempo de elevación (tr): 12 nS

Conductancia de drenaje-sustrato (Cd): 75 pF

Resistencia drenaje-fuente RDS(on): 0.028 Ohm

Empaquetado / Estuche: SOP-8P

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GSM4248W Datasheet (PDF)

1.1. gsm4248w.pdf Size:892K _update-mosfet

GSM4248W
GSM4248W

GSM4248W 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM4248W, N-Channel enhancement mode  20V/6.0A,RDS(ON)=28mΩ@VGS=4.5V MOSFET, uses Advanced Trench Technology to  20V/5.0A,RDS(ON)=32mΩ@VGS=2.5V provide excellent RDS(ON), low gate charge.  20V/4.0A,RDS(ON)=42mΩ@VGS=1.8V  Super high density cell design for extremely These devices are part

1.2. gsm4248w.pdf Size:892K _globaltech_semi

GSM4248W
GSM4248W

GSM4248W 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM4248W, N-Channel enhancement mode  20V/6.0A,RDS(ON)=28mΩ@VGS=4.5V MOSFET, uses Advanced Trench Technology to  20V/5.0A,RDS(ON)=32mΩ@VGS=2.5V provide excellent RDS(ON), low gate charge.  20V/4.0A,RDS(ON)=42mΩ@VGS=1.8V  Super high density cell design for extremely These devices are part

 5.1. gsm4214.pdf Size:824K _update-mosfet

GSM4248W
GSM4248W

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4214, N-Channel enhancement mode  30V/9A,RDS(ON)=16mΩ@VGS=10V MOSFET, uses Advanced Trench Technology to  30V/8A,RDS(ON)=20mΩ@VGS=4.5V provide excellent RDS(ON), low gate charge. These  Super high density cell design for extremely devices are particularly suited for low voltage low RDS (ON) power mana

5.2. gsm4228.pdf Size:937K _update-mosfet

GSM4248W
GSM4248W

GSM4228 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM4228, N-Channel enhancement mode  20V/8A,RDS(ON)=12mΩ@VGS=4.5V MOSFET, uses Advanced Trench Technology to  20V/6A,RDS(ON)=15mΩ@VGS=2.5V provide excellent RDS(ON), low gate charge.  20V/5A,RDS(ON)=20mΩ@VGS=1.8V  Super high density cell design for extremely These devices are particularly

 5.3. gsm4210w.pdf Size:937K _update-mosfet

GSM4248W
GSM4248W

GSM4210W 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4210W, N-Channel enhancement mode  30V/6.8A,RDS(ON)=32mΩ@VGS=10V MOSFET, uses Advanced Trench Technology to  30V/5.6A,RDS(ON)=40mΩ@VGS=4.5V provide excellent RDS(ON), low gate charge.  Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

5.4. gsm4210.pdf Size:966K _update-mosfet

GSM4248W
GSM4248W

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4210, N-Channel enhancement mode  30V/6.8A,RDS(ON)=35mΩ@VGS=10V MOSFET, uses Advanced Trench Technology to  30V/5.6A,RDS(ON)=42mΩ@VGS=4.5V provide excellent RDS(ON), low gate charge.  Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

 5.5. gsm4214w.pdf Size:794K _update-mosfet

GSM4248W
GSM4248W

GSM4214W 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4214W, N-Channel enhancement mode  30V/9A,RDS(ON)=16mΩ@VGS=10V MOSFET, uses Advanced Trench Technology to  30V/8A,RDS(ON)=18mΩ@VGS=4.5V provide excellent RDS(ON), low gate charge.  Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low  S

5.6. gsm4214.pdf Size:824K _globaltech_semi

GSM4248W
GSM4248W

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4214, N-Channel enhancement mode  30V/9A,RDS(ON)=16mΩ@VGS=10V MOSFET, uses Advanced Trench Technology to  30V/8A,RDS(ON)=20mΩ@VGS=4.5V provide excellent RDS(ON), low gate charge. These  Super high density cell design for extremely devices are particularly suited for low voltage low RDS (ON) power mana

5.7. gsm4228.pdf Size:937K _globaltech_semi

GSM4248W
GSM4248W

GSM4228 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM4228, N-Channel enhancement mode  20V/8A,RDS(ON)=12mΩ@VGS=4.5V MOSFET, uses Advanced Trench Technology to  20V/6A,RDS(ON)=15mΩ@VGS=2.5V provide excellent RDS(ON), low gate charge.  20V/5A,RDS(ON)=20mΩ@VGS=1.8V  Super high density cell design for extremely These devices are particularly

5.8. gsm4210w.pdf Size:937K _globaltech_semi

GSM4248W
GSM4248W

GSM4210W 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4210W, N-Channel enhancement mode  30V/6.8A,RDS(ON)=32mΩ@VGS=10V MOSFET, uses Advanced Trench Technology to  30V/5.6A,RDS(ON)=40mΩ@VGS=4.5V provide excellent RDS(ON), low gate charge.  Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

5.9. gsm4210.pdf Size:966K _globaltech_semi

GSM4248W
GSM4248W

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4210, N-Channel enhancement mode  30V/6.8A,RDS(ON)=35mΩ@VGS=10V MOSFET, uses Advanced Trench Technology to  30V/5.6A,RDS(ON)=42mΩ@VGS=4.5V provide excellent RDS(ON), low gate charge.  Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

5.10. gsm4214w.pdf Size:794K _globaltech_semi

GSM4248W
GSM4248W

GSM4214W 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4214W, N-Channel enhancement mode  30V/9A,RDS(ON)=16mΩ@VGS=10V MOSFET, uses Advanced Trench Technology to  30V/8A,RDS(ON)=18mΩ@VGS=4.5V provide excellent RDS(ON), low gate charge.  Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low  S

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