GSM4248W MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: GSM4248W
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 75 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm
   Paquete / Cubierta: SOP-8P

Búsqueda de reemplazo de MOSFET GSM4248W

GSM4248W Datasheet (PDF)

..1. Size:892K globaltech semi
gsm4248w.pdf

GSM4248W 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM4248W, N-Channel enhancement mode 20V/6.0A,RDS(ON)=28m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/5.0A,RDS(ON)=32m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/4.0A,RDS(ON)=42m@VGS=1.8V Super high density cell design for extremely These devices are part

9.1. Size:937K globaltech semi
gsm4210w.pdf

GSM4210W 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4210W, N-Channel enhancement mode 30V/6.8A,RDS(ON)=32m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/5.6A,RDS(ON)=40m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

9.2. Size:824K globaltech semi
gsm4214.pdf

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4214, N-Channel enhancement mode 30V/9A,RDS(ON)=16m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/8A,RDS(ON)=20m@VGS=4.5V provide excellent RDS(ON), low gate charge. These Super high density cell design for extremely devices are particularly suited for low voltage low RDS (ON) power mana

9.3. Size:794K globaltech semi
gsm4214w.pdf

GSM4214W 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4214W, N-Channel enhancement mode 30V/9A,RDS(ON)=16m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/8A,RDS(ON)=18m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low S

9.4. Size:937K globaltech semi
gsm4228.pdf

GSM4228 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM4228, N-Channel enhancement mode 20V/8A,RDS(ON)=12m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/6A,RDS(ON)=15m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/5A,RDS(ON)=20m@VGS=1.8V Super high density cell design for extremely These devices are particularly

9.5. Size:966K globaltech semi
gsm4210.pdf

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4210, N-Channel enhancement mode 30V/6.8A,RDS(ON)=35m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/5.6A,RDS(ON)=42m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

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