Справочник MOSFET. GSM4248W

 

GSM4248W MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: GSM4248W
   Маркировка: 4248W
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2.8 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 6 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 0.65 nC
   trⓘ - Время нарастания: 12 ns
   Cossⓘ - Выходная емкость: 75 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.028 Ohm
   Тип корпуса: SOP-8P

 Аналог (замена) для GSM4248W

 

 

GSM4248W Datasheet (PDF)

 ..1. Size:892K  globaltech semi
 gsm4248w.pdf

GSM4248W GSM4248W

GSM4248W 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM4248W, N-Channel enhancement mode 20V/6.0A,RDS(ON)=28m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/5.0A,RDS(ON)=32m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/4.0A,RDS(ON)=42m@VGS=1.8V Super high density cell design for extremely These devices are part

 9.1. Size:937K  globaltech semi
 gsm4210w.pdf

GSM4248W GSM4248W

GSM4210W 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4210W, N-Channel enhancement mode 30V/6.8A,RDS(ON)=32m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/5.6A,RDS(ON)=40m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 9.2. Size:824K  globaltech semi
 gsm4214.pdf

GSM4248W GSM4248W

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4214, N-Channel enhancement mode 30V/9A,RDS(ON)=16m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/8A,RDS(ON)=20m@VGS=4.5V provide excellent RDS(ON), low gate charge. These Super high density cell design for extremely devices are particularly suited for low voltage low RDS (ON) power mana

 9.3. Size:794K  globaltech semi
 gsm4214w.pdf

GSM4248W GSM4248W

GSM4214W 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4214W, N-Channel enhancement mode 30V/9A,RDS(ON)=16m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/8A,RDS(ON)=18m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low S

 9.4. Size:937K  globaltech semi
 gsm4228.pdf

GSM4248W GSM4248W

GSM4228 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM4228, N-Channel enhancement mode 20V/8A,RDS(ON)=12m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/6A,RDS(ON)=15m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/5A,RDS(ON)=20m@VGS=1.8V Super high density cell design for extremely These devices are particularly

 9.5. Size:966K  globaltech semi
 gsm4210.pdf

GSM4248W GSM4248W

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4210, N-Channel enhancement mode 30V/6.8A,RDS(ON)=35m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/5.6A,RDS(ON)=42m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

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