MTB36N06V Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MTB36N06V

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 90 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 32 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 138 nS

Cossⓘ - Capacitancia de salida: 337 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm

Encapsulados: D2PAK

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MTB36N06V datasheet

 ..1. Size:210K  motorola
 mtb36n06v.pdf pdf_icon

MTB36N06V

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB36N06V/D Designer's Data Sheet MTB36N06V TMOS V Motorola Preferred Device Power Field Effect Transistor D2PAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 32 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an on resistance RDS(on) = 0.04 OHM area product about o

 0.1. Size:241K  motorola
 mtb36n06vrev2x.pdf pdf_icon

MTB36N06V

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB36N06V/D Designer's Data Sheet MTB36N06V TMOS V Motorola Preferred Device Power Field Effect Transistor D2PAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 32 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an on resistance RDS(on) = 0.04 OHM area product about o

 6.1. Size:278K  motorola
 mtb36n06erev0.pdf pdf_icon

MTB36N06V

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB36N06E/D Designer's Data Sheet MTB36N06E TMOS E-FET. Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 36 AMPERES 60 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 0.04 OHM than any existing surface mo

 6.2. Size:239K  motorola
 mtb36n06e.pdf pdf_icon

MTB36N06V

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB36N06E/D Designer's Data Sheet MTB36N06E TMOS E-FET. Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 36 AMPERES 60 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 0.04 OHM than any existing surface mo

MOSTRAR MÁS

Otros transistores... GSM4214W, GSM4228, GSM4248W, GSM4401S, GSM4403, GSM4412, GSM4412W, GSM4422, 7N65, PHP36N06E, PHB36N06E, FTD36N06N, SFP65N06, IPI16CN10N, GSM4424, GSM4424W, GSM4435