MTB36N06V MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MTB36N06V
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 90 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 32 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 39 nC
Tiempo de subida (tr): 138 nS
Conductancia de drenaje-sustrato (Cd): 337 pF
Resistencia entre drenaje y fuente RDS(on): 0.04 Ohm
Paquete / Cubierta: D2PAK
Búsqueda de reemplazo de MOSFET MTB36N06V
MTB36N06V Datasheet (PDF)
mtb36n06v.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB36N06V/DDesigner's Data SheetMTB36N06VTMOS VMotorola Preferred DevicePower Field Effect TransistorD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 32 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresistanceRDS(on) = 0.04 OHMarea product about o
mtb36n06vrev2x.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB36N06V/DDesigner's Data SheetMTB36N06VTMOS VMotorola Preferred DevicePower Field Effect TransistorD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 32 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresistanceRDS(on) = 0.04 OHMarea product about o
mtb36n06erev0.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB36N06E/DDesigner's Data SheetMTB36N06ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 36 AMPERES60 VOLTSThe D2PAK package has the capability of housing a larger dieRDS(on) = 0.04 OHMthan any existing surface mo
mtb36n06e.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB36N06E/DDesigner's Data SheetMTB36N06ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 36 AMPERES60 VOLTSThe D2PAK package has the capability of housing a larger dieRDS(on) = 0.04 OHMthan any existing surface mo
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
