MTB36N06V MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MTB36N06V
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 90 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 32 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 138 nS
Cossⓘ - Capacitancia de salida: 337 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
Paquete / Cubierta: D2PAK
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MTB36N06V Datasheet (PDF)
mtb36n06v.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB36N06V/DDesigner's Data SheetMTB36N06VTMOS VMotorola Preferred DevicePower Field Effect TransistorD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 32 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresistanceRDS(on) = 0.04 OHMarea product about o
mtb36n06vrev2x.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB36N06V/DDesigner's Data SheetMTB36N06VTMOS VMotorola Preferred DevicePower Field Effect TransistorD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 32 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresistanceRDS(on) = 0.04 OHMarea product about o
mtb36n06erev0.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB36N06E/DDesigner's Data SheetMTB36N06ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 36 AMPERES60 VOLTSThe D2PAK package has the capability of housing a larger dieRDS(on) = 0.04 OHMthan any existing surface mo
mtb36n06e.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB36N06E/DDesigner's Data SheetMTB36N06ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 36 AMPERES60 VOLTSThe D2PAK package has the capability of housing a larger dieRDS(on) = 0.04 OHMthan any existing surface mo
Otros transistores... GSM4214W , GSM4228 , GSM4248W , GSM4401S , GSM4403 , GSM4412 , GSM4412W , GSM4422 , STP75NF75 , PHP36N06E , PHB36N06E , FTD36N06N , SFP65N06 , IPI16CN10N , GSM4424 , GSM4424W , GSM4435 .
History: 2SK2635 | PHK31NQ03LT | RUH1H300T
History: 2SK2635 | PHK31NQ03LT | RUH1H300T
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