MTB36N06V Todos los transistores

 

MTB36N06V MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MTB36N06V
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 90 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 32 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 138 nS
   Cossⓘ - Capacitancia de salida: 337 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
   Paquete / Cubierta: D2PAK
 

 Búsqueda de reemplazo de MTB36N06V MOSFET

   - Selección ⓘ de transistores por parámetros

 

MTB36N06V Datasheet (PDF)

 ..1. Size:210K  motorola
 mtb36n06v.pdf pdf_icon

MTB36N06V

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB36N06V/DDesigner's Data SheetMTB36N06VTMOS VMotorola Preferred DevicePower Field Effect TransistorD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 32 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresistanceRDS(on) = 0.04 OHMarea product about o

 0.1. Size:241K  motorola
 mtb36n06vrev2x.pdf pdf_icon

MTB36N06V

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB36N06V/DDesigner's Data SheetMTB36N06VTMOS VMotorola Preferred DevicePower Field Effect TransistorD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 32 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresistanceRDS(on) = 0.04 OHMarea product about o

 6.1. Size:278K  motorola
 mtb36n06erev0.pdf pdf_icon

MTB36N06V

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB36N06E/DDesigner's Data SheetMTB36N06ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 36 AMPERES60 VOLTSThe D2PAK package has the capability of housing a larger dieRDS(on) = 0.04 OHMthan any existing surface mo

 6.2. Size:239K  motorola
 mtb36n06e.pdf pdf_icon

MTB36N06V

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB36N06E/DDesigner's Data SheetMTB36N06ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 36 AMPERES60 VOLTSThe D2PAK package has the capability of housing a larger dieRDS(on) = 0.04 OHMthan any existing surface mo

MOSTRAR MÁS

Otros transistores... GSM4214W , GSM4228 , GSM4248W , GSM4401S , GSM4403 , GSM4412 , GSM4412W , GSM4422 , STP75NF75 , PHP36N06E , PHB36N06E , FTD36N06N , SFP65N06 , IPI16CN10N , GSM4424 , GSM4424W , GSM4435 .

History: SSP60N06 | XG65T230PS1B | NDFPD1N150CG | TPR65R160C | TK58A06N1 | STP3401 | FQB5P10TM

 

 
Back to Top

 


 
.