All MOSFET. MTB36N06V Datasheet

 

MTB36N06V Datasheet and Replacement


   Type Designator: MTB36N06V
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 90 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 32 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 138 nS
   Cossⓘ - Output Capacitance: 337 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: D2PAK
 

 MTB36N06V substitution

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MTB36N06V Datasheet (PDF)

 ..1. Size:210K  motorola
 mtb36n06v.pdf pdf_icon

MTB36N06V

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB36N06V/DDesigner's Data SheetMTB36N06VTMOS VMotorola Preferred DevicePower Field Effect TransistorD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 32 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresistanceRDS(on) = 0.04 OHMarea product about o

 0.1. Size:241K  motorola
 mtb36n06vrev2x.pdf pdf_icon

MTB36N06V

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB36N06V/DDesigner's Data SheetMTB36N06VTMOS VMotorola Preferred DevicePower Field Effect TransistorD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 32 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresistanceRDS(on) = 0.04 OHMarea product about o

 6.1. Size:278K  motorola
 mtb36n06erev0.pdf pdf_icon

MTB36N06V

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB36N06E/DDesigner's Data SheetMTB36N06ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 36 AMPERES60 VOLTSThe D2PAK package has the capability of housing a larger dieRDS(on) = 0.04 OHMthan any existing surface mo

 6.2. Size:239K  motorola
 mtb36n06e.pdf pdf_icon

MTB36N06V

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB36N06E/DDesigner's Data SheetMTB36N06ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 36 AMPERES60 VOLTSThe D2PAK package has the capability of housing a larger dieRDS(on) = 0.04 OHMthan any existing surface mo

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Datasheet: GSM4214W , GSM4228 , GSM4248W , GSM4401S , GSM4403 , GSM4412 , GSM4412W , GSM4422 , 7N65 , PHP36N06E , PHB36N06E , FTD36N06N , SFP65N06 , IPI16CN10N , GSM4424 , GSM4424W , GSM4435 .

Keywords - MTB36N06V MOSFET datasheet

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