MTB36N06V Datasheet and Replacement
Type Designator: MTB36N06V
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 90 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 32 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 138 nS
Cossⓘ - Output Capacitance: 337 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: D2PAK
MTB36N06V substitution
MTB36N06V Datasheet (PDF)
mtb36n06v.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB36N06V/DDesigner's Data SheetMTB36N06VTMOS VMotorola Preferred DevicePower Field Effect TransistorD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 32 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresistanceRDS(on) = 0.04 OHMarea product about o
mtb36n06vrev2x.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB36N06V/DDesigner's Data SheetMTB36N06VTMOS VMotorola Preferred DevicePower Field Effect TransistorD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 32 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresistanceRDS(on) = 0.04 OHMarea product about o
mtb36n06erev0.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB36N06E/DDesigner's Data SheetMTB36N06ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 36 AMPERES60 VOLTSThe D2PAK package has the capability of housing a larger dieRDS(on) = 0.04 OHMthan any existing surface mo
mtb36n06e.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB36N06E/DDesigner's Data SheetMTB36N06ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 36 AMPERES60 VOLTSThe D2PAK package has the capability of housing a larger dieRDS(on) = 0.04 OHMthan any existing surface mo
Datasheet: GSM4214W , GSM4228 , GSM4248W , GSM4401S , GSM4403 , GSM4412 , GSM4412W , GSM4422 , STP75NF75 , PHP36N06E , PHB36N06E , FTD36N06N , SFP65N06 , IPI16CN10N , GSM4424 , GSM4424W , GSM4435 .
History: STH130N10F3-2 | SWF4N80D | SSF1020 | KIA4N65H-252 | STP3401 | IRFL1006PBF | XP202A0003PR
Keywords - MTB36N06V MOSFET datasheet
MTB36N06V cross reference
MTB36N06V equivalent finder
MTB36N06V lookup
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MTB36N06V replacement
History: STH130N10F3-2 | SWF4N80D | SSF1020 | KIA4N65H-252 | STP3401 | IRFL1006PBF | XP202A0003PR



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