GSM4535W Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: GSM4535W

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.8 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 6.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 55 nS

Cossⓘ - Capacitancia de salida: 145 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm

Encapsulados: SOP-8

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GSM4535W datasheet

 ..1. Size:1190K  globaltech semi
 gsm4535w.pdf pdf_icon

GSM4535W

GSM4535W 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM4535W, P-Channel enhancement mode -40V/-6.2A,RDS(ON)= 35m @VGS= -10V OSFET, uses Advanced Trench Technology to -40V/-5.2A,RDS(ON)= 50m @VGS= -4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited

 7.1. Size:1224K  globaltech semi
 gsm4535.pdf pdf_icon

GSM4535W

40V P-Channel Enhancement Mode MOSFET Product Description Features GSM4535, P-Channel enhancement mode -40V/-6.2A,RDS(ON)= 35m @VGS= -10V MOSFET, uses Advanced Trench Technology to -40V/-5.2A,RDS(ON)= 50m @VGS= -4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) volt

 8.1. Size:1320K  globaltech semi
 gsm4539ws.pdf pdf_icon

GSM4535W

GSM4539WS 30V N & P Pair Enhancement Mode MOSFET Product Description Features GSM4539WS, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 30V/5.8A,RDS(ON)=36m @VGS=10V provide excellent RDS(ON), low gate charge. 30V/5.5A,RDS(ON)=46m @VGS=4.5V P-Channel These devices are particularly suited for low -30V/-5.4A,RDS(ON)=62m @VGS=-10V

 8.2. Size:1320K  globaltech semi
 gsm4539s.pdf pdf_icon

GSM4535W

GSM4539S 30V N & P Pair Enhancement Mode MOSFET Product Description Features GSM4539S, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 30V/5.8A,RDS(ON)=40m @VGS=10V provide excellent RDS(ON), low gate charge. 30V/5.5A,RDS(ON)=50m @VGS=4.5V P-Channel These devices are particularly suited for low -30V/-5.4A,RDS(ON)=65m @VGS=-10V

MOSTRAR MÁS

Otros transistores... GSM4440, GSM4440W, GSM4447, GSM4486, GSM4510S, GSM4516, GSM4516W, GSM4535, 12N60, GSM4539S, GSM4539WS, GSM4546, GSM4559, GSM4599, GSM4599W, GSM4634WS, GSM4637