GSM4535W Datasheet. Specs and Replacement

Type Designator: GSM4535W

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 145 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: SOP-8

GSM4535W substitution

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GSM4535W datasheet

 ..1. Size:1190K  globaltech semi
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GSM4535W

GSM4535W 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM4535W, P-Channel enhancement mode -40V/-6.2A,RDS(ON)= 35m @VGS= -10V OSFET, uses Advanced Trench Technology to -40V/-5.2A,RDS(ON)= 50m @VGS= -4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited ... See More ⇒

 7.1. Size:1224K  globaltech semi
 gsm4535.pdf pdf_icon

GSM4535W

40V P-Channel Enhancement Mode MOSFET Product Description Features GSM4535, P-Channel enhancement mode -40V/-6.2A,RDS(ON)= 35m @VGS= -10V MOSFET, uses Advanced Trench Technology to -40V/-5.2A,RDS(ON)= 50m @VGS= -4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) volt... See More ⇒

 8.1. Size:1320K  globaltech semi
 gsm4539ws.pdf pdf_icon

GSM4535W

GSM4539WS 30V N & P Pair Enhancement Mode MOSFET Product Description Features GSM4539WS, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 30V/5.8A,RDS(ON)=36m @VGS=10V provide excellent RDS(ON), low gate charge. 30V/5.5A,RDS(ON)=46m @VGS=4.5V P-Channel These devices are particularly suited for low -30V/-5.4A,RDS(ON)=62m @VGS=-10V ... See More ⇒

 8.2. Size:1320K  globaltech semi
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GSM4535W

GSM4539S 30V N & P Pair Enhancement Mode MOSFET Product Description Features GSM4539S, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 30V/5.8A,RDS(ON)=40m @VGS=10V provide excellent RDS(ON), low gate charge. 30V/5.5A,RDS(ON)=50m @VGS=4.5V P-Channel These devices are particularly suited for low -30V/-5.4A,RDS(ON)=65m @VGS=-10V ... See More ⇒

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Detailed specifications: GSM4440, GSM4440W, GSM4447, GSM4486, GSM4510S, GSM4516, GSM4516W, GSM4535, 12N60, GSM4539S, GSM4539WS, GSM4546, GSM4559, GSM4599, GSM4599W, GSM4634WS, GSM4637

Keywords - GSM4535W MOSFET specs

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