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GSM4539S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: GSM4539S
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 75 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
   Paquete / Cubierta: SOP-8P
 

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GSM4539S Datasheet (PDF)

 ..1. Size:1320K  globaltech semi
 gsm4539s.pdf pdf_icon

GSM4539S

GSM4539S 30V N & P Pair Enhancement Mode MOSFET Product Description Features GSM4539S, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 30V/5.8A,RDS(ON)=40m@VGS=10V provide excellent RDS(ON), low gate charge. 30V/5.5A,RDS(ON)=50m@VGS=4.5V P-Channel These devices are particularly suited for low -30V/-5.4A,RDS(ON)=65m@VGS=-10V

 7.1. Size:1320K  globaltech semi
 gsm4539ws.pdf pdf_icon

GSM4539S

GSM4539WS 30V N & P Pair Enhancement Mode MOSFET Product Description Features GSM4539WS, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 30V/5.8A,RDS(ON)=36m@VGS=10V provide excellent RDS(ON), low gate charge. 30V/5.5A,RDS(ON)=46m@VGS=4.5V P-Channel These devices are particularly suited for low -30V/-5.4A,RDS(ON)=62m@VGS=-10V

 8.1. Size:1224K  globaltech semi
 gsm4535.pdf pdf_icon

GSM4539S

40V P-Channel Enhancement Mode MOSFET Product Description Features GSM4535, P-Channel enhancement mode -40V/-6.2A,RDS(ON)= 35m@VGS= -10V MOSFET, uses Advanced Trench Technology to -40V/-5.2A,RDS(ON)= 50m@VGS= -4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) volt

 8.2. Size:1190K  globaltech semi
 gsm4535w.pdf pdf_icon

GSM4539S

GSM4535W 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM4535W, P-Channel enhancement mode -40V/-6.2A,RDS(ON)= 35m@VGS= -10V OSFET, uses Advanced Trench Technology to -40V/-5.2A,RDS(ON)= 50m@VGS= -4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited

MOSTRAR MÁS

Otros transistores... GSM4440W , GSM4447 , GSM4486 , GSM4510S , GSM4516 , GSM4516W , GSM4535 , GSM4535W , 4435 , GSM4539WS , GSM4546 , GSM4559 , GSM4599 , GSM4599W , GSM4634WS , GSM4637 , GSM4637W .

History: VBL1105 | WML6N100D1 | PSMN1R4-40YLD | CED84A4 | AP4434AGYT-HF | PS75N75A | DMG3414UQ

 

 
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