GSM4539S MOSFET Datasheet: NP-Ch, 30V, 5.4A. Full specification with pinout and replacement list

GSM4539S Specs and Replacement

   Type Designator: GSM4539S
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: SOP-8P

GSM4539S substitution

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GSM4539S datasheet

..1. Size:1320K globaltech semi
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GSM4539S 30V N & P Pair Enhancement Mode MOSFET Product Description Features GSM4539S, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 30V/5.8A,RDS(ON)=40m @VGS=10V provide excellent RDS(ON), low gate charge. 30V/5.5A,RDS(ON)=50m @VGS=4.5V P-Channel These devices are particularly suited for low -30V/-5.4A,RDS(ON)=65m @VGS=-10V ... See More ⇒

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GSM4539WS 30V N & P Pair Enhancement Mode MOSFET Product Description Features GSM4539WS, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 30V/5.8A,RDS(ON)=36m @VGS=10V provide excellent RDS(ON), low gate charge. 30V/5.5A,RDS(ON)=46m @VGS=4.5V P-Channel These devices are particularly suited for low -30V/-5.4A,RDS(ON)=62m @VGS=-10V ... See More ⇒

8.1. Size:1224K globaltech semi
gsm4535.pdf pdf_icon

40V P-Channel Enhancement Mode MOSFET Product Description Features GSM4535, P-Channel enhancement mode -40V/-6.2A,RDS(ON)= 35m @VGS= -10V MOSFET, uses Advanced Trench Technology to -40V/-5.2A,RDS(ON)= 50m @VGS= -4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) volt... See More ⇒

8.2. Size:1190K globaltech semi
gsm4535w.pdf pdf_icon

GSM4535W 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM4535W, P-Channel enhancement mode -40V/-6.2A,RDS(ON)= 35m @VGS= -10V OSFET, uses Advanced Trench Technology to -40V/-5.2A,RDS(ON)= 50m @VGS= -4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited ... See More ⇒

Detailed specifications: GSM4440W , GSM4447 , GSM4486 , GSM4510S , GSM4516 , GSM4516W , GSM4535 , GSM4535W , 5N65 , GSM4539WS , GSM4546 , GSM4559 , GSM4599 , GSM4599W , GSM4634WS , GSM4637 , GSM4637W .