GSM4822WS Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: GSM4822WS

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.8 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 75 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.034 Ohm

Encapsulados: SOP-8

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GSM4822WS datasheet

 ..1. Size:747K  globaltech semi
 gsm4822ws.pdf pdf_icon

GSM4822WS

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4822WS, N-Channel enhancement mode 30V/6.0A,RDS(ON)=34m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/5.0A,RDS(ON)=44m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage powe

 7.1. Size:813K  globaltech semi
 gsm4822s.pdf pdf_icon

GSM4822WS

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4822S, N-Channel enhancement mode 30V/6.0A,RDS(ON)=30m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/5.0A,RDS(ON)=42m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

 9.1. Size:826K  globaltech semi
 gsm4896.pdf pdf_icon

GSM4822WS

GSM4896 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM4896, N-Channel enhancement mode 100V/6.8A,RDS(ON)=115m @VGS=10V MOSFET, uses Advanced Trench Technology to 100V/5.6A,RDS(ON)=125m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for lo

 9.2. Size:723K  globaltech semi
 gsm4804.pdf pdf_icon

GSM4822WS

40V N-Channel Enhancement Mode MOSFET Product Description Features GSM4804, N-Channel enhancement mode 40V/16A,RDS(ON)= 48m @VGS=10V MOSFET, uses Advanced Trench Technology to 40V/10A,RDS(ON)= 70m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

MOSTRAR MÁS

Otros transistores... GSM4559, GSM4599, GSM4599W, GSM4634WS, GSM4637, GSM4637W, GSM4804, GSM4822S, AO4407, GSM4850WS, GSM4874WS, GSM4896, GSM4900W, GSM4906, GSM4922W, GSM4924, GSM4924W