GSM4822WS Datasheet. Specs and Replacement

Type Designator: GSM4822WS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 75 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.034 Ohm

Package: SOP-8

GSM4822WS substitution

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GSM4822WS datasheet

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GSM4822WS

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4822WS, N-Channel enhancement mode 30V/6.0A,RDS(ON)=34m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/5.0A,RDS(ON)=44m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage powe... See More ⇒

 7.1. Size:813K  globaltech semi
 gsm4822s.pdf pdf_icon

GSM4822WS

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4822S, N-Channel enhancement mode 30V/6.0A,RDS(ON)=30m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/5.0A,RDS(ON)=42m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power... See More ⇒

 9.1. Size:826K  globaltech semi
 gsm4896.pdf pdf_icon

GSM4822WS

GSM4896 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM4896, N-Channel enhancement mode 100V/6.8A,RDS(ON)=115m @VGS=10V MOSFET, uses Advanced Trench Technology to 100V/5.6A,RDS(ON)=125m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for lo... See More ⇒

 9.2. Size:723K  globaltech semi
 gsm4804.pdf pdf_icon

GSM4822WS

40V N-Channel Enhancement Mode MOSFET Product Description Features GSM4804, N-Channel enhancement mode 40V/16A,RDS(ON)= 48m @VGS=10V MOSFET, uses Advanced Trench Technology to 40V/10A,RDS(ON)= 70m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power ... See More ⇒

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Detailed specifications: GSM4559, GSM4599, GSM4599W, GSM4634WS, GSM4637, GSM4637W, GSM4804, GSM4822S, AO4407, GSM4850WS, GSM4874WS, GSM4896, GSM4900W, GSM4906, GSM4922W, GSM4924, GSM4924W

Keywords - GSM4822WS MOSFET specs

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