All MOSFET. GSM4822WS Datasheet

 

GSM4822WS Datasheet and Replacement


   Type Designator: GSM4822WS
   Marking Code: 4822WS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.1 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 8 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.034 Ohm
   Package: SOP-8
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GSM4822WS Datasheet (PDF)

 ..1. Size:747K  globaltech semi
 gsm4822ws.pdf pdf_icon

GSM4822WS

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4822WS, N-Channel enhancement mode 30V/6.0A,RDS(ON)=34m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/5.0A,RDS(ON)=44m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage powe

 7.1. Size:813K  globaltech semi
 gsm4822s.pdf pdf_icon

GSM4822WS

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4822S, N-Channel enhancement mode 30V/6.0A,RDS(ON)=30m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/5.0A,RDS(ON)=42m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

 9.1. Size:826K  globaltech semi
 gsm4896.pdf pdf_icon

GSM4822WS

GSM4896 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM4896, N-Channel enhancement mode 100V/6.8A,RDS(ON)=115m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/5.6A,RDS(ON)=125m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for lo

 9.2. Size:723K  globaltech semi
 gsm4804.pdf pdf_icon

GSM4822WS

40V N-Channel Enhancement Mode MOSFET Product Description Features GSM4804, N-Channel enhancement mode 40V/16A,RDS(ON)= 48m@VGS=10V MOSFET, uses Advanced Trench Technology to 40V/10A,RDS(ON)= 70m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

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History: WSD3042DN56 | IPD60R600C6 | APT8052BFLLG

Keywords - GSM4822WS MOSFET datasheet

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