GSM5004S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: GSM5004S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 15 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 6 nS
   Cossⓘ - Capacitancia de salida: 280 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0055 Ohm
   Paquete / Cubierta: TO-252

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GSM5004S Datasheet (PDF)

..1. Size:1210K globaltech semi
gsm5004s.pdf

GSM5004S 40V N-Channel Enhancement Mode MOSFET Product Description Features GSM5004S, N-Channel enhancement mode 40V/20A,RDS(ON)= 5.5m@VGS=10V MOSFET, uses Advanced Trench Technology to 40V/15A,RDS(ON)= 6.5m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low TO-25

8.1. Size:1210K globaltech semi
gsm5008s.pdf

GSM5008S 40V N-Channel Enhancement Mode MOSFET Product Description Features GSM5008S, N-Channel enhancement mode 40V/20A,RDS(ON)= 8.5m@VGS=10V MOSFET, uses Advanced Trench Technology to 40V/15A,RDS(ON)= 10.5m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low TO-2

9.1. Size:742K globaltech semi
gsm501dea.pdf

GSM501DEA 600V N-Channel Enhancement Mode MOSFET Product Description Features GSM501DEA is an N-channel depletion-mode 600V/16mA,RDS(ON)=700@VGS=10V Power MOSEFT which is produced using VDMOS 600V/3mA,RDS(ON)=700@VGS=4.5V technology. Depletion-mode (Normally-on) Improved ESD ability Fast switching The improved planar stripe cell have been especially Impr

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