GSM5004S Datasheet. Specs and Replacement

Type Designator: GSM5004S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 280 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm

Package: TO-252

GSM5004S substitution

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GSM5004S datasheet

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GSM5004S

GSM5004S 40V N-Channel Enhancement Mode MOSFET Product Description Features GSM5004S, N-Channel enhancement mode 40V/20A,RDS(ON)= 5.5m @VGS=10V MOSFET, uses Advanced Trench Technology to 40V/15A,RDS(ON)= 6.5m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low TO-25... See More ⇒

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 gsm5008s.pdf pdf_icon

GSM5004S

GSM5008S 40V N-Channel Enhancement Mode MOSFET Product Description Features GSM5008S, N-Channel enhancement mode 40V/20A,RDS(ON)= 8.5m @VGS=10V MOSFET, uses Advanced Trench Technology to 40V/15A,RDS(ON)= 10.5m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low TO-2... See More ⇒

 9.1. Size:742K  globaltech semi
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GSM5004S

GSM501DEA 600V N-Channel Enhancement Mode MOSFET Product Description Features GSM501DEA is an N-channel depletion-mode 600V/16mA,RDS(ON)=700 @VGS=10V Power MOSEFT which is produced using VDMOS 600V/3mA,RDS(ON)=700 @VGS=4.5V technology. Depletion-mode (Normally-on) Improved ESD ability Fast switching The improved planar stripe cell have been especially Impr... See More ⇒

Detailed specifications: GSM4946W, GSM4948, GSM4953S, GSM4953WS, GSM4996, GSM4997, GSM4998, GSM4998W, 7N60, GSM5008S, GSM501DEA, GSM5604, GSM5606, GSM6202S, GSM6236S, GSM6332, GSM6405

Keywords - GSM5004S MOSFET specs

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