GSM5004S Datasheet and Replacement
Type Designator: GSM5004S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 280 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
Package: TO-252
GSM5004S substitution
GSM5004S Datasheet (PDF)
gsm5004s.pdf
GSM5004S 40V N-Channel Enhancement Mode MOSFET Product Description Features GSM5004S, N-Channel enhancement mode 40V/20A,RDS(ON)= 5.5m@VGS=10V MOSFET, uses Advanced Trench Technology to 40V/15A,RDS(ON)= 6.5m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low TO-25
gsm5008s.pdf
GSM5008S 40V N-Channel Enhancement Mode MOSFET Product Description Features GSM5008S, N-Channel enhancement mode 40V/20A,RDS(ON)= 8.5m@VGS=10V MOSFET, uses Advanced Trench Technology to 40V/15A,RDS(ON)= 10.5m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low TO-2
gsm501dea.pdf
GSM501DEA 600V N-Channel Enhancement Mode MOSFET Product Description Features GSM501DEA is an N-channel depletion-mode 600V/16mA,RDS(ON)=700@VGS=10V Power MOSEFT which is produced using VDMOS 600V/3mA,RDS(ON)=700@VGS=4.5V technology. Depletion-mode (Normally-on) Improved ESD ability Fast switching The improved planar stripe cell have been especially Impr
Datasheet: GSM4946W , GSM4948 , GSM4953S , GSM4953WS , GSM4996 , GSM4997 , GSM4998 , GSM4998W , 7N60 , GSM5008S , GSM501DEA , GSM5604 , GSM5606 , GSM6202S , GSM6236S , GSM6332 , GSM6405 .
Keywords - GSM5004S MOSFET datasheet
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