GSM501DEA Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: GSM501DEA

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 0.03 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 90 nS

Cossⓘ - Capacitancia de salida: 9.1 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 700 Ohm

Encapsulados: SOT-23

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GSM501DEA datasheet

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GSM501DEA

GSM501DEA 600V N-Channel Enhancement Mode MOSFET Product Description Features GSM501DEA is an N-channel depletion-mode 600V/16mA,RDS(ON)=700 @VGS=10V Power MOSEFT which is produced using VDMOS 600V/3mA,RDS(ON)=700 @VGS=4.5V technology. Depletion-mode (Normally-on) Improved ESD ability Fast switching The improved planar stripe cell have been especially Impr

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GSM501DEA

GSM5004S 40V N-Channel Enhancement Mode MOSFET Product Description Features GSM5004S, N-Channel enhancement mode 40V/20A,RDS(ON)= 5.5m @VGS=10V MOSFET, uses Advanced Trench Technology to 40V/15A,RDS(ON)= 6.5m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low TO-25

 9.2. Size:1210K  globaltech semi
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GSM501DEA

GSM5008S 40V N-Channel Enhancement Mode MOSFET Product Description Features GSM5008S, N-Channel enhancement mode 40V/20A,RDS(ON)= 8.5m @VGS=10V MOSFET, uses Advanced Trench Technology to 40V/15A,RDS(ON)= 10.5m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low TO-2

Otros transistores... GSM4953S, GSM4953WS, GSM4996, GSM4997, GSM4998, GSM4998W, GSM5004S, GSM5008S, IRFZ46N, GSM5604, GSM5606, GSM6202S, GSM6236S, GSM6332, GSM6405, GSM6405WS, GSM6424