GSM501DEA MOSFET. Datasheet pdf. Equivalent
Type Designator: GSM501DEA
Marking Code: 501DE
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.7 V
|Id|ⓘ - Maximum Drain Current: 0.03 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 1.8 nC
trⓘ - Rise Time: 90 nS
Cossⓘ - Output Capacitance: 9.1 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 700 Ohm
Package: SOT-23
GSM501DEA Transistor Equivalent Substitute - MOSFET Cross-Reference Search
GSM501DEA Datasheet (PDF)
gsm501dea.pdf
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gsm5004s.pdf
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gsm5008s.pdf
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