GSM501DEA Datasheet and Replacement. Cross Reference Search

GSM501DEA Datasheet (PDF)

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GSM501DEA 600V N-Channel Enhancement Mode MOSFET Product Description Features GSM501DEA is an N-channel depletion-mode 600V/16mA,RDS(ON)=700@VGS=10V Power MOSEFT which is produced using VDMOS 600V/3mA,RDS(ON)=700@VGS=4.5V technology. Depletion-mode (Normally-on) Improved ESD ability Fast switching The improved planar stripe cell have been especially Impr

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GSM5004S 40V N-Channel Enhancement Mode MOSFET Product Description Features GSM5004S, N-Channel enhancement mode 40V/20A,RDS(ON)= 5.5m@VGS=10V MOSFET, uses Advanced Trench Technology to 40V/15A,RDS(ON)= 6.5m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low TO-25

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GSM5008S 40V N-Channel Enhancement Mode MOSFET Product Description Features GSM5008S, N-Channel enhancement mode 40V/20A,RDS(ON)= 8.5m@VGS=10V MOSFET, uses Advanced Trench Technology to 40V/15A,RDS(ON)= 10.5m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low TO-2

Datasheet: GSM4953S , GSM4953WS , GSM4996 , GSM4997 , GSM4998 , GSM4998W , GSM5004S , GSM5008S , STP65NF06 , GSM5604 , GSM5606 , GSM6202S , GSM6236S , GSM6332 , GSM6405 , GSM6405WS , GSM6424 .