GSM6530S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: GSM6530S

Código: 6530S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 48 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 24 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

|VGSth|ⓘ - Tensión umbral entre puerta y fuente: 2 V

Qgⓘ - Carga de la puerta: 17 nC

trⓘ - Tiempo de subida: 16 nS

Cossⓘ - Capacitancia de salida: 420 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0047 Ohm

Encapsulados: DFN5X6-8L

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GSM6530S datasheet

 ..1. Size:898K  globaltech semi
 gsm6530s.pdf pdf_icon

GSM6530S

GSM6530S GSM6530S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM6530S, N-Channel enhancement mode 30V/15A,RDS(ON)=4.7m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/10A,RDS(ON)=6.2m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited

 9.1. Size:1368K  globaltech semi
 gsm6506s.pdf pdf_icon

GSM6530S

GSM6506S GSM6506S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM6506S, N-Channel enhancement mode 30V/18A,RDS(ON)=2.5m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/12A,RDS(ON)=3.5m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 9.2. Size:920K  globaltech semi
 gsm6520s.pdf pdf_icon

GSM6530S

GSM6520S GSM6520S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM6520S, N-Channel enhancement mode 30V/16A,RDS(ON)=7.6m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/13A,RDS(ON)=12.4m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suite

 9.3. Size:436K  globaltech semi
 gsm6561.pdf pdf_icon

GSM6530S

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM6561, N-Channel enhancement mode 30V/3.6A,RDS(ON)=75m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.0A,RDS(ON)=102m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS(ON) voltage power

MOSTRAR MÁS

Otros transistores... GSM6202S, GSM6236S, GSM6332, GSM6405, GSM6405WS, GSM6424, GSM6506S, GSM6520S, AO4407A, GSM6561, GSM6562, GSM6601, GSM6602, GSM6604, GSM6801, GSM6820, GSM6830