GSM6530S Datasheet. Specs and Replacement

Type Designator: GSM6530S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 48 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 24 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 420 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0047 Ohm

Package: DFN5X6-8L

GSM6530S substitution

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GSM6530S datasheet

 ..1. Size:898K  globaltech semi
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GSM6530S

GSM6530S GSM6530S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM6530S, N-Channel enhancement mode 30V/15A,RDS(ON)=4.7m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/10A,RDS(ON)=6.2m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited... See More ⇒

 9.1. Size:1368K  globaltech semi
 gsm6506s.pdf pdf_icon

GSM6530S

GSM6506S GSM6506S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM6506S, N-Channel enhancement mode 30V/18A,RDS(ON)=2.5m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/12A,RDS(ON)=3.5m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low... See More ⇒

 9.2. Size:920K  globaltech semi
 gsm6520s.pdf pdf_icon

GSM6530S

GSM6520S GSM6520S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM6520S, N-Channel enhancement mode 30V/16A,RDS(ON)=7.6m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/13A,RDS(ON)=12.4m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suite... See More ⇒

 9.3. Size:436K  globaltech semi
 gsm6561.pdf pdf_icon

GSM6530S

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM6561, N-Channel enhancement mode 30V/3.6A,RDS(ON)=75m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.0A,RDS(ON)=102m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS(ON) voltage power ... See More ⇒

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Detailed specifications: GSM6202S, GSM6236S, GSM6332, GSM6405, GSM6405WS, GSM6424, GSM6506S, GSM6520S, AO4407A, GSM6561, GSM6562, GSM6601, GSM6602, GSM6604, GSM6801, GSM6820, GSM6830

Keywords - GSM6530S MOSFET specs

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