Справочник MOSFET. GSM6530S

 

GSM6530S Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: GSM6530S
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 48 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 24 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 16 ns
   Cossⓘ - Выходная емкость: 420 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0047 Ohm
   Тип корпуса: DFN5X6-8L
 

 Аналог (замена) для GSM6530S

   - подбор ⓘ MOSFET транзистора по параметрам

 

GSM6530S Datasheet (PDF)

 ..1. Size:898K  globaltech semi
 gsm6530s.pdf pdf_icon

GSM6530S

GSM6530S GSM6530S 30V N-Channel Enhancement Mode MOSFETProduct Description Features GSM6530S, N-Channel enhancement mode 30V/15A,RDS(ON)=4.7m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/10A,RDS(ON)=6.2m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremelylow RDS (ON) These devices are particularly suited

 9.1. Size:1368K  globaltech semi
 gsm6506s.pdf pdf_icon

GSM6530S

GSM6506S GSM6506S 30V N-Channel Enhancement Mode MOSFETProduct Description Features GSM6506S, N-Channel enhancement mode 30V/18A,RDS(ON)=2.5m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/12A,RDS(ON)=3.5m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremelylow RDS (ON) These devices are particularly suited for low

 9.2. Size:920K  globaltech semi
 gsm6520s.pdf pdf_icon

GSM6530S

GSM6520S GSM6520S 30V N-Channel Enhancement Mode MOSFETProduct Description Features GSM6520S, N-Channel enhancement mode 30V/16A,RDS(ON)=7.6m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/13A,RDS(ON)=12.4m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremelylow RDS (ON) These devices are particularly suite

 9.3. Size:436K  globaltech semi
 gsm6561.pdf pdf_icon

GSM6530S

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM6561, N-Channel enhancement mode 30V/3.6A,RDS(ON)=75m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.0A,RDS(ON)=102m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS(ON) voltage power

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... GSM6202S , GSM6236S , GSM6332 , GSM6405 , GSM6405WS , GSM6424 , GSM6506S , GSM6520S , AO3407 , GSM6561 , GSM6562 , GSM6601 , GSM6602 , GSM6604 , GSM6801 , GSM6820 , GSM6830 .

History: SVF10N60S | HGP115N15S | AM2306 | STF10N105K5 | IXFV96N20P | AUIRFP2907 | AONR62921

 

 
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