GSM6561 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: GSM6561

Código: 61*

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 3.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

|VGSth|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V

Qgⓘ - Carga de la puerta: 2.3 nC

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 40 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.075 Ohm

Encapsulados: TSOP-6

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GSM6561 datasheet

 ..1. Size:436K  globaltech semi
 gsm6561.pdf pdf_icon

GSM6561

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM6561, N-Channel enhancement mode 30V/3.6A,RDS(ON)=75m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.0A,RDS(ON)=102m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS(ON) voltage power

 8.1. Size:436K  globaltech semi
 gsm6562.pdf pdf_icon

GSM6561

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM6562, N-Channel enhancement mode 30V/3.6A,RDS(ON)=70m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.0A,RDS(ON)=78m @VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/2.2A,RDS(ON)=95m @VGS=2.5V These devices are particularly suited for low Super high density cell design for ex

 9.1. Size:1368K  globaltech semi
 gsm6506s.pdf pdf_icon

GSM6561

GSM6506S GSM6506S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM6506S, N-Channel enhancement mode 30V/18A,RDS(ON)=2.5m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/12A,RDS(ON)=3.5m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 9.2. Size:920K  globaltech semi
 gsm6520s.pdf pdf_icon

GSM6561

GSM6520S GSM6520S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM6520S, N-Channel enhancement mode 30V/16A,RDS(ON)=7.6m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/13A,RDS(ON)=12.4m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suite

MOSTRAR MÁS

Otros transistores... GSM6236S, GSM6332, GSM6405, GSM6405WS, GSM6424, GSM6506S, GSM6520S, GSM6530S, 60N06, GSM6562, GSM6601, GSM6602, GSM6604, GSM6801, GSM6820, GSM6830, GSM6993