GSM6561 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: GSM6561
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 2 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Максимально допустимый постоянный ток стока |Id|: 3.6 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 12 ns
Выходная емкость (Cd): 40 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.075 Ohm
Тип корпуса: TSOP-6
GSM6561 Datasheet (PDF)
gsm6561.pdf
30V N-Channel Enhancement Mode MOSFET Product Description Features GSM6561, N-Channel enhancement mode 30V/3.6A,RDS(ON)=75m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.0A,RDS(ON)=102m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS(ON) voltage power
gsm6562.pdf
30V N-Channel Enhancement Mode MOSFET Product Description Features GSM6562, N-Channel enhancement mode 30V/3.6A,RDS(ON)=70m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.0A,RDS(ON)=78m@VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/2.2A,RDS(ON)=95m@VGS=2.5V These devices are particularly suited for low Super high density cell design for ex
gsm6506s.pdf
GSM6506S GSM6506S 30V N-Channel Enhancement Mode MOSFETProduct Description Features GSM6506S, N-Channel enhancement mode 30V/18A,RDS(ON)=2.5m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/12A,RDS(ON)=3.5m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremelylow RDS (ON) These devices are particularly suited for low
gsm6520s.pdf
GSM6520S GSM6520S 30V N-Channel Enhancement Mode MOSFETProduct Description Features GSM6520S, N-Channel enhancement mode 30V/16A,RDS(ON)=7.6m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/13A,RDS(ON)=12.4m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremelylow RDS (ON) These devices are particularly suite
gsm6530s.pdf
GSM6530S GSM6530S 30V N-Channel Enhancement Mode MOSFETProduct Description Features GSM6530S, N-Channel enhancement mode 30V/15A,RDS(ON)=4.7m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/10A,RDS(ON)=6.2m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremelylow RDS (ON) These devices are particularly suited
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