All MOSFET. GSM6561 Datasheet

 

GSM6561 Datasheet and Replacement


   Type Designator: GSM6561
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
   Package: TSOP-6
 

 GSM6561 substitution

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GSM6561 Datasheet (PDF)

 ..1. Size:436K  globaltech semi
 gsm6561.pdf pdf_icon

GSM6561

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM6561, N-Channel enhancement mode 30V/3.6A,RDS(ON)=75m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.0A,RDS(ON)=102m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS(ON) voltage power

 8.1. Size:436K  globaltech semi
 gsm6562.pdf pdf_icon

GSM6561

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM6562, N-Channel enhancement mode 30V/3.6A,RDS(ON)=70m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.0A,RDS(ON)=78m@VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/2.2A,RDS(ON)=95m@VGS=2.5V These devices are particularly suited for low Super high density cell design for ex

 9.1. Size:1368K  globaltech semi
 gsm6506s.pdf pdf_icon

GSM6561

GSM6506S GSM6506S 30V N-Channel Enhancement Mode MOSFETProduct Description Features GSM6506S, N-Channel enhancement mode 30V/18A,RDS(ON)=2.5m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/12A,RDS(ON)=3.5m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremelylow RDS (ON) These devices are particularly suited for low

 9.2. Size:920K  globaltech semi
 gsm6520s.pdf pdf_icon

GSM6561

GSM6520S GSM6520S 30V N-Channel Enhancement Mode MOSFETProduct Description Features GSM6520S, N-Channel enhancement mode 30V/16A,RDS(ON)=7.6m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/13A,RDS(ON)=12.4m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremelylow RDS (ON) These devices are particularly suite

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Datasheet: GSM6236S , GSM6332 , GSM6405 , GSM6405WS , GSM6424 , GSM6506S , GSM6520S , GSM6530S , 60N06 , GSM6562 , GSM6601 , GSM6602 , GSM6604 , GSM6801 , GSM6820 , GSM6830 , GSM6993 .

History: MTN1N65I3 | FDM47-06KC5 | AFN7424S | AP2764AI-HF | BSS123 | STM121N | AFN8205

Keywords - GSM6561 MOSFET datasheet

 GSM6561 cross reference
 GSM6561 equivalent finder
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 GSM6561 substitution
 GSM6561 replacement

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