GSM7002 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: GSM7002

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.35 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 0.3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15 nS

Cossⓘ - Capacitancia de salida: 20 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 6 Ohm

Encapsulados: SOT-23

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GSM7002 datasheet

 ..1. Size:808K  globaltech semi
 gsm7002.pdf pdf_icon

GSM7002

60V N-Channel Enhancement Mode MOSFET Product Description Features The GS7002 is the N-Channel enhancement mode 60V/0.50A , RDS(ON)= 6.0 @VGS=10V field effect transistors are produced using high cell 60V/0.30A , RDS(ON)= 7.0 @VGS=5V density DMOS technology. These products have Super high density cell design for extremely been designed to minimize on-state resistance lo

 0.1. Size:429K  globaltech semi
 gsm7002w.pdf pdf_icon

GSM7002

GSM7002W 60V N-Channel Enhancement Mode MOSFET Product Description Features The GSM7002W is the N-Channel enhancement 60V/0.50A , RDS(ON)= 7.5 @VGS=10V mode field effect transistors are produced using 60V/0.05A , RDS(ON)= 7.5 @VGS=5V high cell density DMOS technology. Super high density cell design for extremely low RDS (ON) These products have been designed to minimize

 0.2. Size:289K  globaltech semi
 gsm7002t.pdf pdf_icon

GSM7002

Dual N-Channel Enhancement Mode MOSFET Product Description Features The GSM7002T is the Dual N-Channel 60V/0.50A , RDS(ON)= 2.0 @VGS=10V enhancement mode field effect transistors are 60V/0.20A , RDS(ON)= 4.0 @VGS=4.5V produced using high cell density DMOS Super high density cell design for extremely technology. low RDS (ON) Exceptional on-resistance and maximum

 0.3. Size:434K  globaltech semi
 gsm7002j.pdf pdf_icon

GSM7002

GSM7002J 60V N-Channel Enhancement Mode MOSFET Product Description Features The GSM7002J is the N-Channel enhancement 60V/0.50A , RDS(ON)= 7.5 @VGS=10V mode field effect transistors are produced using 60V/0.05A , RDS(ON)= 7.5 @VGS=5V high cell density DMOS technology. Super high density cell design for extremely low RDS (ON) These products have been designed to minimize

MOSTRAR MÁS

Otros transistores... GSM6562, GSM6601, GSM6602, GSM6604, GSM6801, GSM6820, GSM6830, GSM6993, IRF540N, GSM7002J, GSM7002K, GSM7002T, GSM7002W, GSM7106S, GSM7400, GSM7402, GSM7412