GSM7002 Datasheet. Specs and Replacement

Type Designator: GSM7002

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 20 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm

Package: SOT-23

GSM7002 substitution

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GSM7002 datasheet

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GSM7002

60V N-Channel Enhancement Mode MOSFET Product Description Features The GS7002 is the N-Channel enhancement mode 60V/0.50A , RDS(ON)= 6.0 @VGS=10V field effect transistors are produced using high cell 60V/0.30A , RDS(ON)= 7.0 @VGS=5V density DMOS technology. These products have Super high density cell design for extremely been designed to minimize on-state resistance lo... See More ⇒

 0.1. Size:429K  globaltech semi
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GSM7002

GSM7002W 60V N-Channel Enhancement Mode MOSFET Product Description Features The GSM7002W is the N-Channel enhancement 60V/0.50A , RDS(ON)= 7.5 @VGS=10V mode field effect transistors are produced using 60V/0.05A , RDS(ON)= 7.5 @VGS=5V high cell density DMOS technology. Super high density cell design for extremely low RDS (ON) These products have been designed to minimize... See More ⇒

 0.2. Size:289K  globaltech semi
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GSM7002

Dual N-Channel Enhancement Mode MOSFET Product Description Features The GSM7002T is the Dual N-Channel 60V/0.50A , RDS(ON)= 2.0 @VGS=10V enhancement mode field effect transistors are 60V/0.20A , RDS(ON)= 4.0 @VGS=4.5V produced using high cell density DMOS Super high density cell design for extremely technology. low RDS (ON) Exceptional on-resistance and maximum ... See More ⇒

 0.3. Size:434K  globaltech semi
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GSM7002

GSM7002J 60V N-Channel Enhancement Mode MOSFET Product Description Features The GSM7002J is the N-Channel enhancement 60V/0.50A , RDS(ON)= 7.5 @VGS=10V mode field effect transistors are produced using 60V/0.05A , RDS(ON)= 7.5 @VGS=5V high cell density DMOS technology. Super high density cell design for extremely low RDS (ON) These products have been designed to minimize... See More ⇒

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Detailed specifications: GSM6562, GSM6601, GSM6602, GSM6604, GSM6801, GSM6820, GSM6830, GSM6993, IRF540N, GSM7002J, GSM7002K, GSM7002T, GSM7002W, GSM7106S, GSM7400, GSM7402, GSM7412

Keywords - GSM7002 MOSFET specs

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