All MOSFET. GSM7002 Datasheet

 

GSM7002 MOSFET. Datasheet pdf. Equivalent


   Type Designator: GSM7002
   Marking Code: 702
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 0.35 W
   Maximum Drain-Source Voltage |Vds|: 60 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
   Maximum Drain Current |Id|: 0.3 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 1.4 nC
   Rise Time (tr): 15 nS
   Drain-Source Capacitance (Cd): 20 pF
   Maximum Drain-Source On-State Resistance (Rds): 6 Ohm
   Package: SOT-23

 GSM7002 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

GSM7002 Datasheet (PDF)

 ..1. Size:808K  globaltech semi
 gsm7002.pdf

GSM7002 GSM7002

60V N-Channel Enhancement Mode MOSFET Product Description Features The GS7002 is the N-Channel enhancement mode 60V/0.50A , RDS(ON)= 6.0@VGS=10V field effect transistors are produced using high cell 60V/0.30A , RDS(ON)= 7.0@VGS=5V density DMOS technology. These products have Super high density cell design for extremely been designed to minimize on-state resistance lo

 0.1. Size:429K  globaltech semi
 gsm7002w.pdf

GSM7002 GSM7002

GSM7002W 60V N-Channel Enhancement Mode MOSFET Product Description Features The GSM7002W is the N-Channel enhancement 60V/0.50A , RDS(ON)= 7.5@VGS=10V mode field effect transistors are produced using 60V/0.05A , RDS(ON)= 7.5@VGS=5V high cell density DMOS technology. Super high density cell design for extremely low RDS (ON) These products have been designed to minimize

 0.2. Size:289K  globaltech semi
 gsm7002t.pdf

GSM7002 GSM7002

Dual N-Channel Enhancement Mode MOSFET Product Description Features The GSM7002T is the Dual N-Channel 60V/0.50A , RDS(ON)= 2.0@VGS=10V enhancement mode field effect transistors are 60V/0.20A , RDS(ON)= 4.0@VGS=4.5V produced using high cell density DMOS Super high density cell design for extremely technology. low RDS (ON) Exceptional on-resistance and maximum

 0.3. Size:434K  globaltech semi
 gsm7002j.pdf

GSM7002 GSM7002

GSM7002J 60V N-Channel Enhancement Mode MOSFET Product Description Features The GSM7002J is the N-Channel enhancement 60V/0.50A , RDS(ON)= 7.5@VGS=10V mode field effect transistors are produced using 60V/0.05A , RDS(ON)= 7.5@VGS=5V high cell density DMOS technology. Super high density cell design for extremely low RDS (ON) These products have been designed to minimize

 0.4. Size:988K  globaltech semi
 gsm7002k.pdf

GSM7002 GSM7002

GSM7002K 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM7002K, N-Channel enhancement mode 60V/0.5A , RDS(ON)=2.4@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/0.3A , RDS(ON)=3.0@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low E

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , AO3407 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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