GSM7420 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: GSM7420

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.35 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 3.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 70 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm

Encapsulados: SOT-323

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GSM7420 datasheet

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GSM7420

GSM7420 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM7420, N-Channel enhancement mode 30V/3.6A , RDS(ON)= 60m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/2.6A , RDS(ON)= 70m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for l

 8.1. Size:755K  globaltech semi
 gsm7424s.pdf pdf_icon

GSM7420

GSM7424S GSM7424S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM7424S, N-Channel enhancement mode 30V/20A,RDS(ON)=5m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/15A,RDS(ON)=7m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for

 9.1. Size:862K  globaltech semi
 gsm7412.pdf pdf_icon

GSM7420

GSM7412 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM7412, N-Channel enhancement mode 20V/3.8A , RDS(ON)= 52m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/3.2A , RDS(ON)= 56m @VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/2.8A , RDS(ON)= 68m @VGS=1.8V Super high density cell design for extremely These devices a

 9.2. Size:885K  globaltech semi
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GSM7420

GSM7472S GSM7472S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM7472S, N-Channel enhancement mode 30V/15A,RDS(ON)=8.6m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/13A,RDS(ON)=14m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited

MOSTRAR MÁS

Otros transistores... GSM7002J, GSM7002K, GSM7002T, GSM7002W, GSM7106S, GSM7400, GSM7402, GSM7412, IRF640N, GSM7424S, GSM7472S, GSM7617WS, GSM7619WS, GSM7923WS, GSM8205, GSM8206, GSM8411