GSM7420 Datasheet. Specs and Replacement

Type Designator: GSM7420

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: SOT-323

GSM7420 substitution

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GSM7420 datasheet

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GSM7420

GSM7420 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM7420, N-Channel enhancement mode 30V/3.6A , RDS(ON)= 60m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/2.6A , RDS(ON)= 70m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for l... See More ⇒

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 gsm7424s.pdf pdf_icon

GSM7420

GSM7424S GSM7424S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM7424S, N-Channel enhancement mode 30V/20A,RDS(ON)=5m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/15A,RDS(ON)=7m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for... See More ⇒

 9.1. Size:862K  globaltech semi
 gsm7412.pdf pdf_icon

GSM7420

GSM7412 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM7412, N-Channel enhancement mode 20V/3.8A , RDS(ON)= 52m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/3.2A , RDS(ON)= 56m @VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/2.8A , RDS(ON)= 68m @VGS=1.8V Super high density cell design for extremely These devices a... See More ⇒

 9.2. Size:885K  globaltech semi
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GSM7420

GSM7472S GSM7472S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM7472S, N-Channel enhancement mode 30V/15A,RDS(ON)=8.6m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/13A,RDS(ON)=14m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited ... See More ⇒

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Detailed specifications: GSM7002J, GSM7002K, GSM7002T, GSM7002W, GSM7106S, GSM7400, GSM7402, GSM7412, IRF640N, GSM7424S, GSM7472S, GSM7617WS, GSM7619WS, GSM7923WS, GSM8205, GSM8206, GSM8411

Keywords - GSM7420 MOSFET specs

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