GSM8816 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: GSM8816

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.8 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 180 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.021 Ohm

Encapsulados: TSSOP-8P

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GSM8816 datasheet

 ..1. Size:781K  globaltech semi
 gsm8816.pdf pdf_icon

GSM8816

GSM8816 30V Common-Drain N-Channel Enhancement Mode MOSFET Product Description Features GSM8816, N-Channel enhancement mode 30V/8A,RDS(ON)=21m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/5A,RDS(ON)=24m @VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/4A,RDS(ON)=27m @VGS=2.5V Super high density cell design for extremely These devices

 9.1. Size:439K  globaltech semi
 gsm8822.pdf pdf_icon

GSM8816

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM8822, N-Channel enhancement mode 20V/7.2A,RDS(ON)=28m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/4.8A,RDS(ON)=32m @VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/3.0A,RDS(ON)=45m @VGS=1.8V These devices are particularly suited for low Super high density cell desig

 9.2. Size:616K  globaltech semi
 gsm8803.pdf pdf_icon

GSM8816

GSM8803 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM8803, P-Channel enhancement mode -20V/-5.4A,RDS(ON)=32m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-4.0A,RDS(ON)=42m @VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-3.0A,RDS(ON)=58m @VGS=-1.8V Super high density cell design for extremely These devic

 9.3. Size:432K  globaltech semi
 gsm8822s.pdf pdf_icon

GSM8816

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM8822S, N-Channel enhancement mode 20V/6.5A,RDS(ON)=32m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/4.8A,RDS(ON)=35m @VGS=2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for These devices are particularly suited for low extremely low RDS (ON) volt

MOSTRAR MÁS

Otros transistores... GSM8439, GSM8451, GSM8452, GSM8459, GSM8471, GSM8473, GSM8483, GSM8803, 2N7002, GSM8822, GSM8822S, GSM8823, GSM8904, GSM8918, GSM8931, GSM8936, GSM8943