All MOSFET. GSM8816 Datasheet

 

GSM8816 Datasheet and Replacement


   Type Designator: GSM8816
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
   Package: TSSOP-8P
 

 GSM8816 substitution

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GSM8816 Datasheet (PDF)

 ..1. Size:781K  globaltech semi
 gsm8816.pdf pdf_icon

GSM8816

GSM8816 30V Common-Drain N-Channel Enhancement Mode MOSFET Product Description Features GSM8816, N-Channel enhancement mode 30V/8A,RDS(ON)=21m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/5A,RDS(ON)=24m@VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/4A,RDS(ON)=27m@VGS=2.5V Super high density cell design for extremely These devices

 9.1. Size:439K  globaltech semi
 gsm8822.pdf pdf_icon

GSM8816

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM8822, N-Channel enhancement mode 20V/7.2A,RDS(ON)=28m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/4.8A,RDS(ON)=32m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/3.0A,RDS(ON)=45m@VGS=1.8V These devices are particularly suited for low Super high density cell desig

 9.2. Size:616K  globaltech semi
 gsm8803.pdf pdf_icon

GSM8816

GSM8803 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM8803, P-Channel enhancement mode -20V/-5.4A,RDS(ON)=32m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-4.0A,RDS(ON)=42m@VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-3.0A,RDS(ON)=58m@VGS=-1.8V Super high density cell design for extremely These devic

 9.3. Size:432K  globaltech semi
 gsm8822s.pdf pdf_icon

GSM8816

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM8822S, N-Channel enhancement mode 20V/6.5A,RDS(ON)=32m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/4.8A,RDS(ON)=35m@VGS=2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for These devices are particularly suited for low extremely low RDS (ON) volt

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Datasheet: GSM8439 , GSM8451 , GSM8452 , GSM8459 , GSM8471 , GSM8473 , GSM8483 , GSM8803 , 2N7002 , GSM8822 , GSM8822S , GSM8823 , GSM8904 , GSM8918 , GSM8931 , GSM8936 , GSM8943 .

History: IPI111N15N3G | GSM8473 | QM6003S | AP3988I-HF | GSM8822S | IPU135N03LG | GSM8483

Keywords - GSM8816 MOSFET datasheet

 GSM8816 cross reference
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