GSM8987 Todos los transistores

 

GSM8987 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: GSM8987
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.45 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 90 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 22 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.31 Ohm
   Paquete / Cubierta: SOT-89
 

 Búsqueda de reemplazo de GSM8987 MOSFET

   - Selección ⓘ de transistores por parámetros

 

GSM8987 Datasheet (PDF)

 ..1. Size:449K  globaltech semi
 gsm8987.pdf pdf_icon

GSM8987

GSM8987 90V N-Channel Enhancement Mode MOSFET Product Description Features GSM8987, N-Channel enhancement mode 90V/2.3A,RDS(ON)=310m@VGS=10V MOSFET, uses Advanced Trench Technology 90V/1.8A,RDS(ON)=320m@ VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for low

 0.1. Size:777K  globaltech semi
 gsm8987w.pdf pdf_icon

GSM8987

GSM8987W 80V N-Channel Enhancement Mode MOSFET Product Description Features GSM8987W, N-Channel enhancement mode 80V/4.6A,RDS(ON)=75m@VGS=10V MOSFET, uses Advanced Trench Technology 80V/3.6A,RDS(ON)=85m@ VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for low

 8.1. Size:887K  globaltech semi
 gsm8988.pdf pdf_icon

GSM8987

GSM8988 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM8988, N-Channel enhancement mode 100V/4.6A,RDS(ON)=120m@VGS=10V MOSFET, uses Advanced Trench Technology 100V/3.6A,RDS(ON)=130m@ VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for lo

 8.2. Size:886K  globaltech semi
 gsm8988w.pdf pdf_icon

GSM8987

GSM8988W 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM8988W, N-Channel enhancement mode 100V/4.6A,RDS(ON)=130m@VGS=10V MOSFET, uses Advanced Trench Technology 100V/3.6A,RDS(ON)=138m@ VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for

MOSTRAR MÁS

Otros transistores... GSM8822S , GSM8823 , GSM8904 , GSM8918 , GSM8931 , GSM8936 , GSM8943 , GSM8968 , IRFB3607 , GSM8987W , GSM8988 , GSM8988W , GSM8989 , GSM8995 , GSM9407 , GSM9434WS , GSM9435S .

History: OSG65R380KF | BUK9K17-60E | IRF7832PBF-1 | STD5NK52ZD-1 | IRFU3806PBF | DH100P30CE | HAT1054R

 

 
Back to Top

 


 
.