All MOSFET. GSM8987 Datasheet

 

GSM8987 Datasheet and Replacement


   Type Designator: GSM8987
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 90 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 22 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.31 Ohm
   Package: SOT-89
 

 GSM8987 substitution

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GSM8987 Datasheet (PDF)

 ..1. Size:449K  globaltech semi
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GSM8987

GSM8987 90V N-Channel Enhancement Mode MOSFET Product Description Features GSM8987, N-Channel enhancement mode 90V/2.3A,RDS(ON)=310m@VGS=10V MOSFET, uses Advanced Trench Technology 90V/1.8A,RDS(ON)=320m@ VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for low

 0.1. Size:777K  globaltech semi
 gsm8987w.pdf pdf_icon

GSM8987

GSM8987W 80V N-Channel Enhancement Mode MOSFET Product Description Features GSM8987W, N-Channel enhancement mode 80V/4.6A,RDS(ON)=75m@VGS=10V MOSFET, uses Advanced Trench Technology 80V/3.6A,RDS(ON)=85m@ VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for low

 8.1. Size:887K  globaltech semi
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GSM8987

GSM8988 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM8988, N-Channel enhancement mode 100V/4.6A,RDS(ON)=120m@VGS=10V MOSFET, uses Advanced Trench Technology 100V/3.6A,RDS(ON)=130m@ VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for lo

 8.2. Size:886K  globaltech semi
 gsm8988w.pdf pdf_icon

GSM8987

GSM8988W 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM8988W, N-Channel enhancement mode 100V/4.6A,RDS(ON)=130m@VGS=10V MOSFET, uses Advanced Trench Technology 100V/3.6A,RDS(ON)=138m@ VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for

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Datasheet: GSM8822S , GSM8823 , GSM8904 , GSM8918 , GSM8931 , GSM8936 , GSM8943 , GSM8968 , K4145 , GSM8987W , GSM8988 , GSM8988W , GSM8989 , GSM8995 , GSM9407 , GSM9434WS , GSM9435S .

History: SP8K31FRA | AP3990W

Keywords - GSM8987 MOSFET datasheet

 GSM8987 cross reference
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