GSM8987 Datasheet. Specs and Replacement

Type Designator: GSM8987

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 90 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 22 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.31 Ohm

Package: SOT-89

GSM8987 substitution

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GSM8987 datasheet

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GSM8987

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GSM8987

GSM8988 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM8988, N-Channel enhancement mode 100V/4.6A,RDS(ON)=120m @VGS=10V MOSFET, uses Advanced Trench Technology 100V/3.6A,RDS(ON)=130m @ VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for lo... See More ⇒

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GSM8987

GSM8988W 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM8988W, N-Channel enhancement mode 100V/4.6A,RDS(ON)=130m @VGS=10V MOSFET, uses Advanced Trench Technology 100V/3.6A,RDS(ON)=138m @ VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for ... See More ⇒

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Detailed specifications: GSM8822S, GSM8823, GSM8904, GSM8918, GSM8931, GSM8936, GSM8943, GSM8968, K4145, GSM8987W, GSM8988, GSM8988W, GSM8989, GSM8995, GSM9407, GSM9434WS, GSM9435S

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