Справочник MOSFET. GSM8987

 

GSM8987 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: GSM8987
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1.45 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 90 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2.3 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 20 ns
   Cossⓘ - Выходная емкость: 22 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.31 Ohm
   Тип корпуса: SOT-89

 Аналог (замена) для GSM8987

 

 

GSM8987 Datasheet (PDF)

 ..1. Size:449K  globaltech semi
 gsm8987.pdf

GSM8987 GSM8987

GSM8987 90V N-Channel Enhancement Mode MOSFET Product Description Features GSM8987, N-Channel enhancement mode 90V/2.3A,RDS(ON)=310m@VGS=10V MOSFET, uses Advanced Trench Technology 90V/1.8A,RDS(ON)=320m@ VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for low

 0.1. Size:777K  globaltech semi
 gsm8987w.pdf

GSM8987 GSM8987

GSM8987W 80V N-Channel Enhancement Mode MOSFET Product Description Features GSM8987W, N-Channel enhancement mode 80V/4.6A,RDS(ON)=75m@VGS=10V MOSFET, uses Advanced Trench Technology 80V/3.6A,RDS(ON)=85m@ VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for low

 8.1. Size:887K  globaltech semi
 gsm8988.pdf

GSM8987 GSM8987

GSM8988 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM8988, N-Channel enhancement mode 100V/4.6A,RDS(ON)=120m@VGS=10V MOSFET, uses Advanced Trench Technology 100V/3.6A,RDS(ON)=130m@ VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for lo

 8.2. Size:886K  globaltech semi
 gsm8988w.pdf

GSM8987 GSM8987

GSM8988W 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM8988W, N-Channel enhancement mode 100V/4.6A,RDS(ON)=130m@VGS=10V MOSFET, uses Advanced Trench Technology 100V/3.6A,RDS(ON)=138m@ VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for

 8.3. Size:813K  globaltech semi
 gsm8989.pdf

GSM8987 GSM8987

GSM8989 60V P-Channel Enhancement Mode MOSFET Product Description Features GSM8989, P-Channel enhancement mode -60V/-3.6A,RDS(ON)=115m@VGS=-10V MOSFET, uses Advanced Trench Technology -60V/-2.6A,RDS(ON)=125m@ VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for

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