GSM9498 Todos los transistores

 

GSM9498 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: GSM9498
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 40 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.135 Ohm
   Paquete / Cubierta: TO-252
     - Selección de transistores por parámetros

 

GSM9498 Datasheet (PDF)

 ..1. Size:807K  globaltech semi
 gsm9498.pdf pdf_icon

GSM9498

GSM9498 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM9498, N-Channel enhancement mode 100V/5A,RDS(ON)=135m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/3A,RDS(ON)=145m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 9.1. Size:955K  globaltech semi
 gsm9435s.pdf pdf_icon

GSM9498

GSM9435S P-Channel Enhancement Mode MOSFET Product Description Features GSM9435S, P-Channel enhancement mode -30V/-5.3A,RDS(ON)=52m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-4.2A,RDS(ON)=76m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 9.2. Size:908K  globaltech semi
 gsm9434ws.pdf pdf_icon

GSM9498

GSM9434WS 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM9434WS, P-Channel enhancement mode -20V/-6.5A,RDS(ON)= 42m@VGS= -4.5V OSFET, uses Advanced Trench Technology to -20V/-4.5A,RDS(ON)= 58m@VGS= -2.5V provide excellent RDS(ON), low gate charge. -20V/-2.5A,RDS(ON)= 72m@VGS= -1.8V Super high density cell design for extremely These

 9.3. Size:951K  globaltech semi
 gsm9435ws.pdf pdf_icon

GSM9498

GSM9435WS 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM9435WS, P-Channel enhancement mode -30V/-5.3A,RDS(ON)=58m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-4.2A,RDS(ON)=78m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited f

MOSTRAR MÁS

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: WMK10N100C2 | KP737A | SVG083R4NS | SSF7504A7 | IRF8852 | UPA1870BGR | CEU3423

 

 
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