All MOSFET. GSM9498 Datasheet

 

GSM9498 Datasheet and Replacement


   Type Designator: GSM9498
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.135 Ohm
   Package: TO-252
 

 GSM9498 substitution

   - MOSFET ⓘ Cross-Reference Search

 

GSM9498 Datasheet (PDF)

 ..1. Size:807K  globaltech semi
 gsm9498.pdf pdf_icon

GSM9498

GSM9498 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM9498, N-Channel enhancement mode 100V/5A,RDS(ON)=135m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/3A,RDS(ON)=145m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 9.1. Size:955K  globaltech semi
 gsm9435s.pdf pdf_icon

GSM9498

GSM9435S P-Channel Enhancement Mode MOSFET Product Description Features GSM9435S, P-Channel enhancement mode -30V/-5.3A,RDS(ON)=52m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-4.2A,RDS(ON)=76m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 9.2. Size:908K  globaltech semi
 gsm9434ws.pdf pdf_icon

GSM9498

GSM9434WS 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM9434WS, P-Channel enhancement mode -20V/-6.5A,RDS(ON)= 42m@VGS= -4.5V OSFET, uses Advanced Trench Technology to -20V/-4.5A,RDS(ON)= 58m@VGS= -2.5V provide excellent RDS(ON), low gate charge. -20V/-2.5A,RDS(ON)= 72m@VGS= -1.8V Super high density cell design for extremely These

 9.3. Size:951K  globaltech semi
 gsm9435ws.pdf pdf_icon

GSM9498

GSM9435WS 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM9435WS, P-Channel enhancement mode -30V/-5.3A,RDS(ON)=58m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-4.2A,RDS(ON)=78m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited f

SHOW MORE

Datasheet: GSM8988 , GSM8988W , GSM8989 , GSM8995 , GSM9407 , GSM9434WS , GSM9435S , GSM9435WS , IRFP450 , GSM9510S , GSM9565S , GSM9566W , GSM9575S , GSM9576 , GSM9910 , GSM9971 , GSM9971B .

History: IRL520NS | 2SK3588-01L | FRK150D | IXFT14N100

Keywords - GSM9498 MOSFET datasheet

 GSM9498 cross reference
 GSM9498 equivalent finder
 GSM9498 lookup
 GSM9498 substitution
 GSM9498 replacement

 

 
Back to Top

 


 
.