Справочник MOSFET. GSM9498

 

GSM9498 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: GSM9498
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 40 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 10 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 10 ns
   Cossⓘ - Выходная емкость: 40 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.135 Ohm
   Тип корпуса: TO-252
     - подбор MOSFET транзистора по параметрам

 

GSM9498 Datasheet (PDF)

 ..1. Size:807K  globaltech semi
 gsm9498.pdf pdf_icon

GSM9498

GSM9498 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM9498, N-Channel enhancement mode 100V/5A,RDS(ON)=135m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/3A,RDS(ON)=145m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 9.1. Size:955K  globaltech semi
 gsm9435s.pdf pdf_icon

GSM9498

GSM9435S P-Channel Enhancement Mode MOSFET Product Description Features GSM9435S, P-Channel enhancement mode -30V/-5.3A,RDS(ON)=52m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-4.2A,RDS(ON)=76m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 9.2. Size:908K  globaltech semi
 gsm9434ws.pdf pdf_icon

GSM9498

GSM9434WS 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM9434WS, P-Channel enhancement mode -20V/-6.5A,RDS(ON)= 42m@VGS= -4.5V OSFET, uses Advanced Trench Technology to -20V/-4.5A,RDS(ON)= 58m@VGS= -2.5V provide excellent RDS(ON), low gate charge. -20V/-2.5A,RDS(ON)= 72m@VGS= -1.8V Super high density cell design for extremely These

 9.3. Size:951K  globaltech semi
 gsm9435ws.pdf pdf_icon

GSM9498

GSM9435WS 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM9435WS, P-Channel enhancement mode -30V/-5.3A,RDS(ON)=58m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-4.2A,RDS(ON)=78m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited f

ПОКАЗАТЬ ЕЩЁ

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History: SI1405BDH | FL6L5201 | FRS230H | IRF9Z34N | CHM4955JGP | KI001P | HYG025N04NA1C2

 

 
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