GSM9510S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: GSM9510S

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 40 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 8.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15 nS

Cossⓘ - Capacitancia de salida: 70 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm

Encapsulados: TO-252

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GSM9510S datasheet

 ..1. Size:985K  globaltech semi
 gsm9510s.pdf pdf_icon

GSM9510S

GSM9510S 100V P-Channel Enhancement Mode MOSFET Product Description Features GSM9510S, P-Channel enhancement mode -100V/-8.0A,RDS(ON)=200m @VGS=-10V MOSFET, uses Advanced Trench Technology to -100V/-7.0A,RDS(ON)=220m @VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suite

 9.1. Size:998K  globaltech semi
 gsm9575s.pdf pdf_icon

GSM9510S

GSM9575S 60V P-Channel Enhancement Mode MOSFET Product Description Features GSM9575S, P-Channel enhancement mode -60V/-18A,RDS(ON)=68m @VGS=-10V MOSFET, uses Advanced Trench Technology to -60V/-12A,RDS(ON)=78m @VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for l

 9.2. Size:1264K  globaltech semi
 gsm9566w.pdf pdf_icon

GSM9510S

GSM9566W 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM9566W, P-Channel enhancement mode -40V/-5.0A,RDS(ON)=80m @VGS=-10V MOSFET, uses Advanced Trench Technology to -40V/-3.5A,RDS(ON)=105m @VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited fo

 9.3. Size:997K  globaltech semi
 gsm9565s.pdf pdf_icon

GSM9510S

GSM9565S 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM9565S, P-Channel enhancement mode -40V/-8.6A,RDS(ON)=58m @VGS=-10V MOSFET, uses Advanced Trench Technology to -40V/-6.2A,RDS(ON)=86m @VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for

MOSTRAR MÁS

Otros transistores... GSM8988W, GSM8989, GSM8995, GSM9407, GSM9434WS, GSM9435S, GSM9435WS, GSM9498, AON7506, GSM9565S, GSM9566W, GSM9575S, GSM9576, GSM9910, GSM9971, GSM9971B, GSM9972S