GSM9510S Datasheet. Specs and Replacement

Type Designator: GSM9510S

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm

Package: TO-252

GSM9510S substitution

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GSM9510S datasheet

 ..1. Size:985K  globaltech semi
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GSM9510S

GSM9510S 100V P-Channel Enhancement Mode MOSFET Product Description Features GSM9510S, P-Channel enhancement mode -100V/-8.0A,RDS(ON)=200m @VGS=-10V MOSFET, uses Advanced Trench Technology to -100V/-7.0A,RDS(ON)=220m @VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suite... See More ⇒

 9.1. Size:998K  globaltech semi
 gsm9575s.pdf pdf_icon

GSM9510S

GSM9575S 60V P-Channel Enhancement Mode MOSFET Product Description Features GSM9575S, P-Channel enhancement mode -60V/-18A,RDS(ON)=68m @VGS=-10V MOSFET, uses Advanced Trench Technology to -60V/-12A,RDS(ON)=78m @VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for l... See More ⇒

 9.2. Size:1264K  globaltech semi
 gsm9566w.pdf pdf_icon

GSM9510S

GSM9566W 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM9566W, P-Channel enhancement mode -40V/-5.0A,RDS(ON)=80m @VGS=-10V MOSFET, uses Advanced Trench Technology to -40V/-3.5A,RDS(ON)=105m @VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited fo... See More ⇒

 9.3. Size:997K  globaltech semi
 gsm9565s.pdf pdf_icon

GSM9510S

GSM9565S 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM9565S, P-Channel enhancement mode -40V/-8.6A,RDS(ON)=58m @VGS=-10V MOSFET, uses Advanced Trench Technology to -40V/-6.2A,RDS(ON)=86m @VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for... See More ⇒

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Detailed specifications: GSM8988W, GSM8989, GSM8995, GSM9407, GSM9434WS, GSM9435S, GSM9435WS, GSM9498, AON7506, GSM9565S, GSM9566W, GSM9575S, GSM9576, GSM9910, GSM9971, GSM9971B, GSM9972S

Keywords - GSM9510S MOSFET specs

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