GSM9972S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: GSM9972S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 40 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 35 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 300 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm

Encapsulados: TO-252

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GSM9972S datasheet

 ..1. Size:931K  globaltech semi
 gsm9972s.pdf pdf_icon

GSM9972S

GSM9972S 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM9972S, N-Channel enhancement mode 60V/35A,RDS(ON)=15m @VGS=10V MOSFET, uses Advanced Trench Technology to 60V/25A,RDS(ON)=18m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 8.1. Size:922K  globaltech semi
 gsm9971b.pdf pdf_icon

GSM9972S

GSM9971B 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM9971B, N-Channel enhancement mode 60V/18A,RDS(ON)=56m @VGS=10V MOSFET, uses Advanced Trench Technology to 60V/12A,RDS(ON)=62m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 8.2. Size:803K  globaltech semi
 gsm9977.pdf pdf_icon

GSM9972S

GSM9977 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM9977, N-Channel enhancement mode 60V/8A,RDS(ON)=118m @VGS=10V MOSFET, uses Advanced Trench Technology to 60V/6A,RDS(ON)=130m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low T

 8.3. Size:433K  globaltech semi
 gsm9971.pdf pdf_icon

GSM9972S

60V N-Channel Enhancement Mode MOSFET Product Description Features GSM9971, N-Channel enhancement mode 60V/18A,RDS(ON)= 42m @VGS=10V MOSFET, uses Advanced Trench Technology 60V/12A,RDS(ON)= 50m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

MOSTRAR MÁS

Otros transistores... GSM9510S, GSM9565S, GSM9566W, GSM9575S, GSM9576, GSM9910, GSM9971, GSM9971B, IRF1407, GSM9977, GSM9987, GSM9990S, GSM9995S, GSM9997, GSMBSS123, GSMBSS138, GSMBSS84