GSM9972S Datasheet. Specs and Replacement

Type Designator: GSM9972S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm

Package: TO-252

GSM9972S substitution

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GSM9972S datasheet

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GSM9972S

GSM9972S 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM9972S, N-Channel enhancement mode 60V/35A,RDS(ON)=15m @VGS=10V MOSFET, uses Advanced Trench Technology to 60V/25A,RDS(ON)=18m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low ... See More ⇒

 8.1. Size:922K  globaltech semi
 gsm9971b.pdf pdf_icon

GSM9972S

GSM9971B 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM9971B, N-Channel enhancement mode 60V/18A,RDS(ON)=56m @VGS=10V MOSFET, uses Advanced Trench Technology to 60V/12A,RDS(ON)=62m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low ... See More ⇒

 8.2. Size:803K  globaltech semi
 gsm9977.pdf pdf_icon

GSM9972S

GSM9977 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM9977, N-Channel enhancement mode 60V/8A,RDS(ON)=118m @VGS=10V MOSFET, uses Advanced Trench Technology to 60V/6A,RDS(ON)=130m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low T... See More ⇒

 8.3. Size:433K  globaltech semi
 gsm9971.pdf pdf_icon

GSM9972S

60V N-Channel Enhancement Mode MOSFET Product Description Features GSM9971, N-Channel enhancement mode 60V/18A,RDS(ON)= 42m @VGS=10V MOSFET, uses Advanced Trench Technology 60V/12A,RDS(ON)= 50m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power ... See More ⇒

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Detailed specifications: GSM9510S, GSM9565S, GSM9566W, GSM9575S, GSM9576, GSM9910, GSM9971, GSM9971B, IRF1407, GSM9977, GSM9987, GSM9990S, GSM9995S, GSM9997, GSMBSS123, GSMBSS138, GSMBSS84

Keywords - GSM9972S MOSFET specs

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