GSM9972S - параметры транзистора MOSFET, его аналоги, datasheet

GSM9972S Datasheet (PDF)

..1. Size:931K globaltech semi
gsm9972s.pdf pdf_icon

GSM9972S 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM9972S, N-Channel enhancement mode 60V/35A,RDS(ON)=15m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/25A,RDS(ON)=18m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

8.1. Size:922K globaltech semi
gsm9971b.pdf pdf_icon

GSM9971B 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM9971B, N-Channel enhancement mode 60V/18A,RDS(ON)=56m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/12A,RDS(ON)=62m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

8.2. Size:803K globaltech semi
gsm9977.pdf pdf_icon

GSM9977 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM9977, N-Channel enhancement mode 60V/8A,RDS(ON)=118m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/6A,RDS(ON)=130m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low T

8.3. Size:433K globaltech semi
gsm9971.pdf pdf_icon

60V N-Channel Enhancement Mode MOSFET Product Description Features GSM9971, N-Channel enhancement mode 60V/18A,RDS(ON)= 42m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/12A,RDS(ON)= 50m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

Другие MOSFET... GSM9510S , GSM9565S , GSM9566W , GSM9575S , GSM9576 , GSM9910 , GSM9971 , GSM9971B , P0903BDG , GSM9977 , GSM9987 , GSM9990S , GSM9995S , GSM9997 , GSMBSS123 , GSMBSS138 , GSMBSS84 .