GSMBSS84 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: GSMBSS84

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.225 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 50 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 0.13 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 1 nS

Cossⓘ - Capacitancia de salida: 10 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 10 Ohm

Encapsulados: SOT-23

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GSMBSS84 datasheet

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GSMBSS84

GSMBSS84 GSMBSS84 50V P-Channel Enhancement Mode MOSFET Product Description Features -50V/-0.1A,RDS(ON)=10 @VGS=-5V GSMBSS84, P-Channel enhancement mode Super high density cell design for extremely MOSFET, uses Advanced Trench Technology to low RDS (ON) provide excellent RDS(ON), low gate charge. Exceptional on-resistance and maximum DC current capability The

 8.1. Size:233K  globaltech semi
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GSMBSS84

GSMBSS123 100V N-Channel Enhancement Mode MOSFET Product Description Features The GSMBSS123 is the N-Channel enhancement 100V/0.1A , RDS(ON)=6.0 @VGS=10V mode field effect transistors are produced using SOT-23 package design high cell density DMOS technology. Lead(Pb)-Free These products have been designed to minimize on-state resistance while provide rugged, reliable, and

 8.2. Size:432K  globaltech semi
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GSMBSS84

GSMBSS138 50V N-Channel Enhancement Mode MOSFET Product Description Features The GSMBSS138 is the N-Channel enhancement 50V/0.2A , RDS(ON)=3.5 @VGS=5V mode field effect transistors are produced using 50V/0.2A , RDS(ON)=10 @VGS=2.75V high cell density DMOS technology. Super high density cell design for extremely low RDS (ON) These products have been designed to min

Otros transistores... GSM9972S, GSM9977, GSM9987, GSM9990S, GSM9995S, GSM9997, GSMBSS123, GSMBSS138, 20N50, H5N2001LM, H5N2512FL-M0, H5N2522FP-E0, H5N2901FL-M0, H5N3005LM, H5N3007FL-M0, H5N5004PL-E0-E, H5N5005PL-E0-E