GSMBSS84 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: GSMBSS84
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.225 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 50 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.13 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 1 nS
Cossⓘ - Capacitancia de salida: 10 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 10 Ohm
Paquete / Cubierta: SOT-23
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GSMBSS84 Datasheet (PDF)
gsmbss84.pdf

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gsmbss123.pdf

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gsmbss138.pdf

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Otros transistores... GSM9972S , GSM9977 , GSM9987 , GSM9990S , GSM9995S , GSM9997 , GSMBSS123 , GSMBSS138 , IRF530 , H5N2001LM , H5N2512FL-M0 , H5N2522FP-E0 , H5N2901FL-M0 , H5N3005LM , H5N3007FL-M0 , H5N5004PL-E0-E , H5N5005PL-E0-E .



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