GSMBSS84 Datasheet. Specs and Replacement
Type Designator: GSMBSS84
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.225 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 1 nS
Cossⓘ - Output Capacitance: 10 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 10 Ohm
Package: SOT-23
GSMBSS84 substitution
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GSMBSS84 datasheet
gsmbss84.pdf
GSMBSS84 GSMBSS84 50V P-Channel Enhancement Mode MOSFET Product Description Features -50V/-0.1A,RDS(ON)=10 @VGS=-5V GSMBSS84, P-Channel enhancement mode Super high density cell design for extremely MOSFET, uses Advanced Trench Technology to low RDS (ON) provide excellent RDS(ON), low gate charge. Exceptional on-resistance and maximum DC current capability The... See More ⇒
gsmbss123.pdf
GSMBSS123 100V N-Channel Enhancement Mode MOSFET Product Description Features The GSMBSS123 is the N-Channel enhancement 100V/0.1A , RDS(ON)=6.0 @VGS=10V mode field effect transistors are produced using SOT-23 package design high cell density DMOS technology. Lead(Pb)-Free These products have been designed to minimize on-state resistance while provide rugged, reliable, and... See More ⇒
gsmbss138.pdf
GSMBSS138 50V N-Channel Enhancement Mode MOSFET Product Description Features The GSMBSS138 is the N-Channel enhancement 50V/0.2A , RDS(ON)=3.5 @VGS=5V mode field effect transistors are produced using 50V/0.2A , RDS(ON)=10 @VGS=2.75V high cell density DMOS technology. Super high density cell design for extremely low RDS (ON) These products have been designed to min... See More ⇒
Detailed specifications: GSM9972S, GSM9977, GSM9987, GSM9990S, GSM9995S, GSM9997, GSMBSS123, GSMBSS138, 20N50, H5N2001LM, H5N2512FL-M0, H5N2522FP-E0, H5N2901FL-M0, H5N3005LM, H5N3007FL-M0, H5N5004PL-E0-E, H5N5005PL-E0-E
Keywords - GSMBSS84 MOSFET specs
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