H7N1002LM Todos los transistores

 

H7N1002LM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: H7N1002LM
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 75 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 245 nS
   Cossⓘ - Capacitancia de salida: 740 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm
   Paquete / Cubierta: LDPAK

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H7N1002LM Datasheet (PDF)

 ..1. Size:152K  renesas
h7n1002lm.pdf

H7N1002LM
H7N1002LM

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 6.1. Size:154K  renesas
rej03g1131 h7n1002ldlslmds.pdf

H7N1002LM
H7N1002LM

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 7.1. Size:222K  renesas
rej03g0130 h7n1002ab.pdf

H7N1002LM
H7N1002LM

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:88K  renesas
r07ds0209ej h7n1004fm.pdf

H7N1002LM
H7N1002LM

Preliminary Datasheet H7N1004FM R07DS0209EJ0200(Previous: REJ03G0073-0100)Silicon N-Channel MOSFET Rev.2.00High-Speed Power Switching Dec 02, 2010Features Low on-resistance RDS(on) = 25 m typ. Low drive current Available for 4.5 V gate drive Outline RENESAS Package code: PRSS0003AD-A(Package name: TO-220FM )2D1. Gate1 G2. Drain3. Sou

 8.2. Size:133K  renesas
rej03g1736 h7n1005dldsds.pdf

H7N1002LM
H7N1002LM

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.3. Size:139K  renesas
rej03g0391 h7n1005ldlslmds.pdf

H7N1002LM
H7N1002LM

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.4. Size:131K  renesas
rej03g1482 h7n1004dldsds.pdf

H7N1002LM
H7N1002LM

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.5. Size:120K  renesas
rej03g0072 h7n1004ldlslm.pdf

H7N1002LM
H7N1002LM

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.6. Size:123K  renesas
rej03g1579 h7n1004abds.pdf

H7N1002LM
H7N1002LM

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.7. Size:166K  ixys
ixfh7n100p.pdf

H7N1002LM
H7N1002LM

Polar TM HiPerFETTM VDSS = 1000VIXFA7N100PPower MOSFETs ID25 = 7AIXFP7N100P RDS(on) 1.9 IXFH7N100PN-Channel Enhancement ModeTO-263 AA (IXFA)Avalanche RatedFast Intrinsic RectifierGSD (Tab)TO-220AB (IXFP)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C, RGS = 1M 1000 VVGSS Conti

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