H7N1002LM Datasheet. Specs and Replacement
Type Designator: H7N1002LM
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 75 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 245 nS
Cossⓘ - Output Capacitance: 740 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: LDPAK
H7N1002LM substitution
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H7N1002LM datasheet
h7n1002lm.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
rej03g1131 h7n1002ldlslmds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
rej03g0130 h7n1002ab.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
r07ds0209ej h7n1004fm.pdf
Preliminary Datasheet H7N1004FM R07DS0209EJ0200 (Previous REJ03G0073-0100) Silicon N-Channel MOSFET Rev.2.00 High-Speed Power Switching Dec 02, 2010 Features Low on-resistance RDS(on) = 25 m typ. Low drive current Available for 4.5 V gate drive Outline RENESAS Package code PRSS0003AD-A (Package name TO-220FM ) 2 D 1. Gate 1 G 2. Drain 3. Sou... See More ⇒
Detailed specifications: H5N5004PL-E0-E, H5N5005PL-E0-E, H5N5006LD, H5N5006LM, H5N5016PL-E0-E, H7N0405LD, H7N0405LM, H7N0607DL, IRFZ46N, INJ0001AC1, INJ0001AM1, INJ0001AU1, INJ0002AC1, INJ0002AM1, INJ0002AU1, INJ0003AC1, INJ0003AM1
Keywords - H7N1002LM MOSFET specs
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