H7N1002LM Datasheet. Specs and Replacement

Type Designator: H7N1002LM

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 245 nS

Cossⓘ - Output Capacitance: 740 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: LDPAK

H7N1002LM substitution

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H7N1002LM datasheet

 ..1. Size:152K  renesas
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H7N1002LM

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 6.1. Size:154K  renesas
rej03g1131 h7n1002ldlslmds.pdf pdf_icon

H7N1002LM

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 7.1. Size:222K  renesas
rej03g0130 h7n1002ab.pdf pdf_icon

H7N1002LM

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.1. Size:88K  renesas
r07ds0209ej h7n1004fm.pdf pdf_icon

H7N1002LM

Preliminary Datasheet H7N1004FM R07DS0209EJ0200 (Previous REJ03G0073-0100) Silicon N-Channel MOSFET Rev.2.00 High-Speed Power Switching Dec 02, 2010 Features Low on-resistance RDS(on) = 25 m typ. Low drive current Available for 4.5 V gate drive Outline RENESAS Package code PRSS0003AD-A (Package name TO-220FM ) 2 D 1. Gate 1 G 2. Drain 3. Sou... See More ⇒

Detailed specifications: H5N5004PL-E0-E, H5N5005PL-E0-E, H5N5006LD, H5N5006LM, H5N5016PL-E0-E, H7N0405LD, H7N0405LM, H7N0607DL, IRFZ46N, INJ0001AC1, INJ0001AM1, INJ0001AU1, INJ0002AC1, INJ0002AM1, INJ0002AU1, INJ0003AC1, INJ0003AM1

Keywords - H7N1002LM MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.