H7N1002LM datasheet, аналоги, основные параметры
Наименование производителя: H7N1002LM
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 100 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 75 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 245 ns
Cossⓘ - Выходная емкость: 740 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.01 Ohm
Тип корпуса: LDPAK
Аналог (замена) для H7N1002LM
- подборⓘ MOSFET транзистора по параметрам
H7N1002LM даташит
h7n1002lm.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rej03g1131 h7n1002ldlslmds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rej03g0130 h7n1002ab.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
r07ds0209ej h7n1004fm.pdf
Preliminary Datasheet H7N1004FM R07DS0209EJ0200 (Previous REJ03G0073-0100) Silicon N-Channel MOSFET Rev.2.00 High-Speed Power Switching Dec 02, 2010 Features Low on-resistance RDS(on) = 25 m typ. Low drive current Available for 4.5 V gate drive Outline RENESAS Package code PRSS0003AD-A (Package name TO-220FM ) 2 D 1. Gate 1 G 2. Drain 3. Sou
Другие IGBT... H5N5004PL-E0-E, H5N5005PL-E0-E, H5N5006LD, H5N5006LM, H5N5016PL-E0-E, H7N0405LD, H7N0405LM, H7N0607DL, IRFZ46N, INJ0001AC1, INJ0001AM1, INJ0001AU1, INJ0002AC1, INJ0002AM1, INJ0002AU1, INJ0003AC1, INJ0003AM1
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Список транзисторов
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