STP65NF06 MOSFET. Datasheet pdf. Equivalent
Type Designator: STP65NF06
Marking Code: P65NF06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 110 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 60 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 54 nC
Rise Time (tr): 60 nS
Drain-Source Capacitance (Cd): 400 pF
Maximum Drain-Source On-State Resistance (Rds): 0.014 Ohm
Package: TO220
STP65NF06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STP65NF06 Datasheet (PDF)
std65nf06 stp65nf06.pdf
STD65NF06STP65NF06N-channel 60V - 11.5m - 60A - DPAK/TO-220STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD65NF06 60V
stp65nf06.pdf
STP65NF06www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.011 at VGS = 10 V 60 Material categorization:600.012 at VGS = 4.5 V 50DTO-220ABGSDSGN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limi
stp65nf06.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor STP65NF06FEATURESWith TO-220 packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET
stp652f.pdf
GrerrPPrPrProSTP652FaS mHop Microelectronics C orp.Ver 1.1N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for extremely low RDS(ON).RDS(ON) (m) TypVDSS IDHigh power and current handling capability.60V 29A 22 @ VGS=10VTO-220F package.DGG D SSTF SERIESSTO-220F(TC=25C unless ot
stp656f.pdf
GrPPrPPSTP656FSamHop Microelectronics Corp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m ) MaxRugged and reliable.19 @ VGS=10VTO-220F Package.60V 22A29 @ VGS=4.5VDGG D SSTF SERIESTO-220FS(TC=25C unless otherwise noted)ABSOLUTE MAXIMUM RATINGSSym
stp6506.pdf
STP6506 Dual P Channel Enhancement Mode MOSFET -2.8ADESCRIPTION The STC6506 is the dual P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP450 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: HY3810P
