STP65NF06 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: STP65NF06
Маркировка: P65NF06
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 110 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 60 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 54 nC
Время нарастания (tr): 60 ns
Выходная емкость (Cd): 400 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.014 Ohm
Тип корпуса: TO220
STP65NF06 Datasheet (PDF)
std65nf06 stp65nf06.pdf
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STD65NF06STP65NF06N-channel 60V - 11.5m - 60A - DPAK/TO-220STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD65NF06 60V
stp65nf06.pdf
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STP65NF06www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.011 at VGS = 10 V 60 Material categorization:600.012 at VGS = 4.5 V 50DTO-220ABGSDSGN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limi
stp65nf06.pdf
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INCHANGE Semiconductorisc N-Channel MOSFET Transistor STP65NF06FEATURESWith TO-220 packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET
stp652f.pdf
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GrerrPPrPrProSTP652FaS mHop Microelectronics C orp.Ver 1.1N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for extremely low RDS(ON).RDS(ON) (m) TypVDSS IDHigh power and current handling capability.60V 29A 22 @ VGS=10VTO-220F package.DGG D SSTF SERIESSTO-220F(TC=25C unless ot
stp656f.pdf
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GrPPrPPSTP656FSamHop Microelectronics Corp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m ) MaxRugged and reliable.19 @ VGS=10VTO-220F Package.60V 22A29 @ VGS=4.5VDGG D SSTF SERIESTO-220FS(TC=25C unless otherwise noted)ABSOLUTE MAXIMUM RATINGSSym
stp6506.pdf
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STP6506 Dual P Channel Enhancement Mode MOSFET -2.8ADESCRIPTION The STC6506 is the dual P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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Список транзисторов
Обновления
MOSFET: NCES120R018T4 | NCES120P075T4 | NCES120P035T4 | NCES075R026T4 | NCES075R026T | NCEP60ND60G | NCEP60ND30AG | NCEP40T14A | NCEP40ND80G | NCEP1580F | NCEP023NH85GU | NCEP023NH85AGU | NCEP018NH30QU | NCEP015NH30GU | NCEP015NH30AQU | NCEP015NH30AGU